Advanced Process and Structure for High Performance Oxide Thin‐Film Transistors

Abstract

The required carrier mobility of metal oxide thin-film transistors (TFTs) has been increasing rapidly to meet the demands of the ultra-high-resolution, large panel size and three dimensional visual effects as a megatrend of flat panel display. However, the typical field-effect mobility of IGZO TFTs in the practical production line is less than 10 cm2/Vs, which is still not enough to drive the high-end flat panel displays with ≥ 300 ppi, more than 60 inch and high frame rate ( ≥ 240 Hz). Approaches to improve the mobility of electron carriers in metal oxide TFT would involve the optimization of cation composition, stacked channel structure and the lattice ordering-induced crystallization. In this paper, we presented our recent efforts toward the high performance and good reliability, which included the non-IGZO composition, double channel structure such as ZTO/IZO and ZTO/ITO, the metal-induced crystallization at a low temperature, and atomic layer deposited IGZO TFTs.