Gate Voltage Dependence of Low Frequency Noise in Tunneling Field Effect Transistors

Abstract

In this paper, the dependency of low frequency noise as a function of the gate voltage was examined for tunneling field effect transistors (TFETs). When the level of gate voltage is low, the tunneling width of the TFETs is large. Thus, electrons move via the trap instead of tunneling directly. On the other hand, when the level of gate voltage is high, the tunneling width of the TFETs becomes narrow. Thus, when the gate voltage is low, the noise level of TFETs is high because electrons pass through the trap. However, when the gate voltage is high, electrons pass directly from valence band of source to conduction band of drain, so the noise level is low. Finding the voltage suitable for this TFET is important to determine the optimum conditions for generating BTBT when measuring TFETs and to reduce noise.