MIT characteristic of VO₂ thin film deposited by ALD using vanadium oxytriisopropoxide precursor and H₂O reactant
DC Field | Value | Language |
---|---|---|
dc.contributor.author | Shin, Changhee | - |
dc.contributor.author | Lee, Namgue | - |
dc.contributor.author | Choi, Hyeongsu | - |
dc.contributor.author | Park, Hyunwoo | - |
dc.contributor.author | Jung, Chanwon | - |
dc.contributor.author | Song, Seokhwi | - |
dc.contributor.author | Yuk, Hyunwoo | - |
dc.contributor.author | Kim, Youngjoon | - |
dc.contributor.author | Kim, Jong-Woo | - |
dc.contributor.author | Kim, Keunsik | - |
dc.contributor.author | Choi, Youngtae | - |
dc.contributor.author | Seo, Hyungtak | - |
dc.contributor.author | Jeon, Hyeongtag | - |
dc.date.accessioned | 2021-08-02T10:52:42Z | - |
dc.date.available | 2021-08-02T10:52:42Z | - |
dc.date.created | 2021-05-12 | - |
dc.date.issued | 2019-10 | - |
dc.identifier.issn | 1229-9162 | - |
dc.identifier.uri | https://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/12478 | - |
dc.description.abstract | VO₂ is an attractive candidate as a transition metal oxide switching material as a selection device for reduction of sneak-path current. We demonstrate deposition of nanoscale VO₂ thin films via thermal atomic layer deposition (ALD) with H₂O reactant. Using this method, we demonstrate VO₂ thin films with high-quality characteristics, including crystallinity, reproducibility using X-ray diffraction, and X-ray photoelectron spectroscopy measurement. We also present a method that can increase uniformity and thin film quality by splitting the pulse cycle into two using scanning electron microscope measurement. We demonstrate an ON / OFF ratio of about 40, which is caused by metal insulator transition (MIT) of VO₂ thin film. ALD-deposited VO₂ films with high film uniformity can be applied to next-generation nonvolatile memory devices with high density due to their metal-insulator transition characteristic with high current density, fast switching speed, and high ON / OFF ratio. | - |
dc.language | 영어 | - |
dc.language.iso | en | - |
dc.publisher | KOREAN ASSOC CRYSTAL GROWTH, INC | - |
dc.title | MIT characteristic of VO₂ thin film deposited by ALD using vanadium oxytriisopropoxide precursor and H₂O reactant | - |
dc.title.alternative | MIT characteristic of VO2 thin film deposited by ALD using vanadium oxytriisopropoxide precursor and H2O reactant | - |
dc.type | Article | - |
dc.contributor.affiliatedAuthor | Jeon, Hyeongtag | - |
dc.identifier.doi | 10.36410/jcpr.2019.20.5.484 | - |
dc.identifier.scopusid | 2-s2.0-85078031128 | - |
dc.identifier.wosid | 000495382000007 | - |
dc.identifier.bibliographicCitation | JOURNAL OF CERAMIC PROCESSING RESEARCH, v.20, no.5, pp.484 - 489 | - |
dc.relation.isPartOf | JOURNAL OF CERAMIC PROCESSING RESEARCH | - |
dc.citation.title | JOURNAL OF CERAMIC PROCESSING RESEARCH | - |
dc.citation.volume | 20 | - |
dc.citation.number | 5 | - |
dc.citation.startPage | 484 | - |
dc.citation.endPage | 489 | - |
dc.type.rims | ART | - |
dc.type.docType | Article | - |
dc.identifier.kciid | ART002517226 | - |
dc.description.journalClass | 1 | - |
dc.description.isOpenAccess | Y | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.description.journalRegisteredClass | kci | - |
dc.relation.journalResearchArea | Materials Science | - |
dc.relation.journalWebOfScienceCategory | Materials Science, Ceramics | - |
dc.subject.keywordPlus | SWITCHING PROPERTIES | - |
dc.subject.keywordPlus | HIGH-DENSITY | - |
dc.subject.keywordPlus | TRANSITION | - |
dc.subject.keywordPlus | DRIVEN | - |
dc.subject.keywordAuthor | Atomic layer deposition | - |
dc.subject.keywordAuthor | Vanadium dioxide | - |
dc.subject.keywordAuthor | Metal insulator transition | - |
dc.subject.keywordAuthor | Sneak-path current | - |
dc.subject.keywordAuthor | Selection device | - |
dc.identifier.url | https://www.kci.go.kr/kciportal/landing/article.kci?arti_id=ART002517226 | - |
Items in ScholarWorks are protected by copyright, with all rights reserved, unless otherwise indicated.
222, Wangsimni-ro, Seongdong-gu, Seoul, 04763, Korea+82-2-2220-1365
COPYRIGHT © 2021 HANYANG UNIVERSITY.
Certain data included herein are derived from the © Web of Science of Clarivate Analytics. All rights reserved.
You may not copy or re-distribute this material in whole or in part without the prior written consent of Clarivate Analytics.