Remote Plasma Atomic Layer Deposition of SiNx Using Cyclosilazane and H₂/N₂ Plasma
DC Field | Value | Language |
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dc.contributor.author | Cho, Haewon | - |
dc.contributor.author | Lee, Namgue | - |
dc.contributor.author | Choi, Hyeongsu | - |
dc.contributor.author | Park, Hyunwoo | - |
dc.contributor.author | Jung, Chanwon | - |
dc.contributor.author | Song, Seokhwi | - |
dc.contributor.author | Yuk, Hyunwoo | - |
dc.contributor.author | Kim, Youngjoon | - |
dc.contributor.author | Kim, Jong-Woo | - |
dc.contributor.author | Kim, Keunsik | - |
dc.contributor.author | Choi, Youngtae | - |
dc.contributor.author | Park, Suhyeon | - |
dc.contributor.author | Kwon, Yurim | - |
dc.contributor.author | Jeon, Hyeongtag | - |
dc.date.accessioned | 2021-08-02T10:54:00Z | - |
dc.date.available | 2021-08-02T10:54:00Z | - |
dc.date.created | 2021-05-12 | - |
dc.date.issued | 2019-09 | - |
dc.identifier.issn | 2076-3417 | - |
dc.identifier.uri | https://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/12575 | - |
dc.description.abstract | Silicon nitride (SiNx) thin films using 1,3-di-isopropylamino-2,4-dimethylcyclosilazane (CSN-2) and N₂ plasma were investigated. The growth rate of SiNx thin films was saturated in the range of 200-500°C, yielding approximately 0.38 angstrom/cycle, and featuring a wide process window. The physical and chemical properties of the SiNx films were investigated as a function of deposition temperature. As temperature was increased, transmission electron microscopy (TEM) analysis confirmed that a conformal thin film was obtained. Also, we developed a three-step process in which the H₂ plasma step was introduced before the N₂ plasma step. In order to investigate the effect of H₂ plasma, we evaluated the growth rate, step coverage, and wet etch rate according to H₂ plasma exposure time (10-30 s). As a result, the side step coverage increased from 82% to 105% and the bottom step coverages increased from 90% to 110% in the narrow pattern. By increasing the H₂ plasma to 30 s, the wet etch rate was 32 angstrom/min, which is much lower than the case of only N₂plasma (43 angstrom/min). | - |
dc.language | 영어 | - |
dc.language.iso | en | - |
dc.publisher | MDPI | - |
dc.title | Remote Plasma Atomic Layer Deposition of SiNx Using Cyclosilazane and H₂/N₂ Plasma | - |
dc.title.alternative | Remote Plasma Atomic Layer Deposition of SiNx Using Cyclosilazane and H-2/N-2 Plasma | - |
dc.type | Article | - |
dc.contributor.affiliatedAuthor | Jeon, Hyeongtag | - |
dc.identifier.doi | 10.3390/app9173531 | - |
dc.identifier.scopusid | 2-s2.0-85072281683 | - |
dc.identifier.wosid | 000488603600093 | - |
dc.identifier.bibliographicCitation | APPLIED SCIENCES-BASEL, v.9, no.17 | - |
dc.relation.isPartOf | APPLIED SCIENCES-BASEL | - |
dc.citation.title | APPLIED SCIENCES-BASEL | - |
dc.citation.volume | 9 | - |
dc.citation.number | 17 | - |
dc.type.rims | ART | - |
dc.type.docType | Article | - |
dc.description.journalClass | 1 | - |
dc.description.isOpenAccess | Y | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Chemistry | - |
dc.relation.journalResearchArea | Engineering | - |
dc.relation.journalResearchArea | Materials Science | - |
dc.relation.journalResearchArea | Physics | - |
dc.relation.journalWebOfScienceCategory | Chemistry, Multidisciplinary | - |
dc.relation.journalWebOfScienceCategory | Engineering, Multidisciplinary | - |
dc.relation.journalWebOfScienceCategory | Materials Science, Multidisciplinary | - |
dc.relation.journalWebOfScienceCategory | Physics, Applied | - |
dc.subject.keywordPlus | CHALLENGES | - |
dc.subject.keywordAuthor | atomic layer deposition | - |
dc.subject.keywordAuthor | remote plasma | - |
dc.subject.keywordAuthor | SiNx thin films | - |
dc.identifier.url | https://www.mdpi.com/2076-3417/9/17/3531 | - |
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