Achieving a Low-Voltage, High-Mobility IGZO Transistor through an ALD-Derived Bilayer Channel and a Hafnia-Based Gate Dielectric Stack
DC Field | Value | Language |
---|---|---|
dc.contributor.author | Cho, Min Hoe | - |
dc.contributor.author | Choi, Cheol Hee | - |
dc.contributor.author | Seul, Hyeon Joo | - |
dc.contributor.author | Cho, Hyun Cheol | - |
dc.contributor.author | Jeong, Jae Kyeong | - |
dc.date.accessioned | 2021-07-30T04:45:13Z | - |
dc.date.available | 2021-07-30T04:45:13Z | - |
dc.date.created | 2021-07-14 | - |
dc.date.issued | 2021-04 | - |
dc.identifier.issn | 1944-8244 | - |
dc.identifier.uri | https://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/1283 | - |
dc.description.abstract | Ultrahigh-resolution displays for augmented reality (AR) and virtual reality (VR) applications require a novel architecture and process. Atomic-layer deposition (ALD) enables the facile fabrication of indium-gallium zinc oxide (IGZO) thin-film transistors (TFTs) on a substrate with a nonplanar surface due to its excellent step coverage and accurate thickness control. Here, we report all-ALD-derived TFTs using IGZO and HfO2 as the channel layer and gate insulator, respectively. A bilayer IGZO channel structure consisting of a 10 nm base layer (In0.52Ga0.29Zn0.19O) with good stability and a 3 nm boost layer (In0.82Ga0.08Zn0.10O) with extremely high mobility was designed based on a cation combinatorial study of the ALD-derived IGZO system. Reducing the thickness of the HfO2 dielectric film by the ALD process offers high areal capacitance in field-effect transistors, which allows low-voltage drivability and enhanced carrier transport. The intrinsic inferior stability of the HfO2 gate insulator was effectively mitigated by the insertion of an ALD-derived 4 nm Al2O3 interfacial layer between HfO2 and the IGZO film. The optimized bilayer IGZO TFTs with HfO2-based gate insulators exhibited excellent performances with a high field-effect mobility of 74.0 +/- 0.91 cm(2)/(V s), a low subthreshold swing of 0.13 +/- 0.01 V/dec, a threshold voltage of 0.20 +/- 0.24 V, and an I-ON/OFF of similar to 3.2 x 10(8) in a low-operation-voltage (<= 2 V) range. This promising result was due to the synergic effects of a bilayer IGZO channel and HfO2-based gate insulator with a high permittivity, which were mainly attributed to the effective carrier confinement in the boost layer with high mobility, low free carrier density of the base layer with a low V-O concentration, and HfO2-induced high effective capacitance. | - |
dc.language | 영어 | - |
dc.language.iso | en | - |
dc.publisher | AMER CHEMICAL SOC | - |
dc.title | Achieving a Low-Voltage, High-Mobility IGZO Transistor through an ALD-Derived Bilayer Channel and a Hafnia-Based Gate Dielectric Stack | - |
dc.type | Article | - |
dc.contributor.affiliatedAuthor | Jeong, Jae Kyeong | - |
dc.identifier.doi | 10.1021/acsami.0c22677 | - |
dc.identifier.scopusid | 2-s2.0-85104369419 | - |
dc.identifier.wosid | 000641156600065 | - |
dc.identifier.bibliographicCitation | ACS APPLIED MATERIALS & INTERFACES, v.13, no.14, pp.16628 - 16640 | - |
dc.relation.isPartOf | ACS APPLIED MATERIALS & INTERFACES | - |
dc.citation.title | ACS APPLIED MATERIALS & INTERFACES | - |
dc.citation.volume | 13 | - |
dc.citation.number | 14 | - |
dc.citation.startPage | 16628 | - |
dc.citation.endPage | 16640 | - |
dc.type.rims | ART | - |
dc.type.docType | Article | - |
dc.description.journalClass | 1 | - |
dc.description.isOpenAccess | N | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Science & Technology - Other Topics | - |
dc.relation.journalResearchArea | Materials Science | - |
dc.relation.journalWebOfScienceCategory | Nanoscience & Nanotechnology | - |
dc.relation.journalWebOfScienceCategory | Materials Science, Multidisciplinary | - |
dc.subject.keywordPlus | THIN-FILM TRANSISTORS | - |
dc.subject.keywordPlus | ATOMIC LAYER DEPOSITION | - |
dc.subject.keywordPlus | ELECTRONIC-STRUCTURE | - |
dc.subject.keywordPlus | OXIDE SEMICONDUCTOR | - |
dc.subject.keywordPlus | TEMPERATURE | - |
dc.subject.keywordPlus | PERFORMANCE | - |
dc.subject.keywordPlus | ULTRATHIN | - |
dc.subject.keywordPlus | INGAZNO | - |
dc.subject.keywordAuthor | atomic-layer deposition | - |
dc.subject.keywordAuthor | indium-gallium zinc oxide | - |
dc.subject.keywordAuthor | bilayer channel | - |
dc.subject.keywordAuthor | high-kappa dielectric | - |
dc.subject.keywordAuthor | high mobility | - |
dc.subject.keywordAuthor | low operation voltage | - |
dc.subject.keywordAuthor | bias stability | - |
dc.subject.keywordAuthor | thin-film transistor | - |
dc.identifier.url | https://pubs.acs.org/doi/10.1021/acsami.0c22677 | - |
Items in ScholarWorks are protected by copyright, with all rights reserved, unless otherwise indicated.
222, Wangsimni-ro, Seongdong-gu, Seoul, 04763, Korea+82-2-2220-1365
COPYRIGHT © 2021 HANYANG UNIVERSITY.
Certain data included herein are derived from the © Web of Science of Clarivate Analytics. All rights reserved.
You may not copy or re-distribute this material in whole or in part without the prior written consent of Clarivate Analytics.