Characteristics of Silicon Oxide Thin Film Deposited via Remote Plasma Atomic Layer Deposition
DC Field | Value | Language |
---|---|---|
dc.contributor.author | Jung, Chanwon | - |
dc.contributor.author | Song, Seokhwi | - |
dc.contributor.author | Lee, Namgue | - |
dc.contributor.author | Kim, Youngjoon | - |
dc.contributor.author | Lee, Eun Jong | - |
dc.contributor.author | Lee, Sung Gwon | - |
dc.contributor.author | Jeon, Hyeongtag | - |
dc.date.accessioned | 2021-07-30T04:45:15Z | - |
dc.date.available | 2021-07-30T04:45:15Z | - |
dc.date.created | 2021-07-14 | - |
dc.date.issued | 2021-04 | - |
dc.identifier.issn | 2162-8769 | - |
dc.identifier.uri | https://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/1298 | - |
dc.description.abstract | Recently, high-quality SiO2 thin films deposited at low temperatures have become popular because of their excellent dielectric properties. In this study, SiO2 thin films were deposited through remote plasma atomic layer deposition (RPALD) using a bis(tertiary-butylamino)silane (BTBAS) precursor and O-2 plasma. The growth rate was saturated at 1.0 angstrom/cycle between 300 degrees C and 400 degrees C and was maintained throughout the process. The SiO2 thin film was oxygen rich according to Auger electron spectroscopy (AES), and the Si-O-Si bond structure was analyzed by measuring the binding energy differences using X-ray photoelectron spectroscopy (XPS). The leakage current density was 2.0 x 10-7 A cm(-2) at 2 MV cm(-1). As the deposition temperature increased from 300 degrees C to 400 degrees C, the breakdown voltage increased from 8.5 MV cm(-1) to 10.5 MV cm(-1) and the dielectric constant decreased from 3.85 to 3.72, which is slightly lower than for typical SiO2. | - |
dc.language | 영어 | - |
dc.language.iso | en | - |
dc.publisher | ELECTROCHEMICAL SOC INC | - |
dc.title | Characteristics of Silicon Oxide Thin Film Deposited via Remote Plasma Atomic Layer Deposition | - |
dc.type | Article | - |
dc.contributor.affiliatedAuthor | Jeon, Hyeongtag | - |
dc.identifier.doi | 10.1149/2162-8777/abf725 | - |
dc.identifier.scopusid | 2-s2.0-85104798871 | - |
dc.identifier.wosid | 000642254600001 | - |
dc.identifier.bibliographicCitation | ECS JOURNAL OF SOLID STATE SCIENCE AND TECHNOLOGY, v.10, no.4, pp.1 - 54 | - |
dc.relation.isPartOf | ECS JOURNAL OF SOLID STATE SCIENCE AND TECHNOLOGY | - |
dc.citation.title | ECS JOURNAL OF SOLID STATE SCIENCE AND TECHNOLOGY | - |
dc.citation.volume | 10 | - |
dc.citation.number | 4 | - |
dc.citation.startPage | 1 | - |
dc.citation.endPage | 54 | - |
dc.type.rims | ART | - |
dc.type.docType | Article | - |
dc.description.journalClass | 1 | - |
dc.description.isOpenAccess | N | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Materials Science | - |
dc.relation.journalResearchArea | Physics | - |
dc.relation.journalWebOfScienceCategory | Materials Science, Multidisciplinary | - |
dc.relation.journalWebOfScienceCategory | Physics, Applied | - |
dc.subject.keywordPlus | Atomic layer deposition | - |
dc.subject.keywordPlus | Auger electron spectroscopy | - |
dc.subject.keywordPlus | Binding energy | - |
dc.subject.keywordPlus | Dielectric properties of solids | - |
dc.subject.keywordPlus | Growth rate | - |
dc.subject.keywordPlus | Low-k dielectric | - |
dc.subject.keywordPlus | Silica | - |
dc.subject.keywordPlus | Silicon oxides | - |
dc.subject.keywordPlus | X ray photoelectron spectroscopy | - |
dc.subject.keywordPlus | Auger electron spectroscopies (AES) | - |
dc.subject.keywordPlus | Bis(tertiary-butylamino)silane | - |
dc.subject.keywordPlus | Deposition temperatures | - |
dc.subject.keywordPlus | Energy differences | - |
dc.subject.keywordPlus | Low temperatures | - |
dc.subject.keywordPlus | Remote plasma atomic layer depositions | - |
dc.subject.keywordPlus | Silicon oxide thin films | - |
dc.subject.keywordPlus | SiO2 thin films | - |
dc.subject.keywordPlus | Thin films | - |
dc.subject.keywordAuthor | Dielectrics | - |
dc.subject.keywordAuthor | SiO2 | - |
dc.subject.keywordAuthor | Atomic layer deposition | - |
dc.subject.keywordAuthor | X-ray photoelectron spectroscopy | - |
dc.subject.keywordAuthor | Thin film growth | - |
dc.identifier.url | https://iopscience.iop.org/article/10.1149/2162-8777/abf725 | - |
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