Double Pinned Perpendicular-Magnetic-Tunnel-Junction Spin-Valve Providing Multi-level Resistance States
DC Field | Value | Language |
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dc.contributor.author | Choi, Jin-Young | - |
dc.contributor.author | Jun, Hansol | - |
dc.contributor.author | Ashiba, Kei | - |
dc.contributor.author | Baek, Jong-Ung | - |
dc.contributor.author | Shim, Tae-Hun | - |
dc.contributor.author | Park, JEA GUN | - |
dc.date.accessioned | 2021-08-02T11:26:52Z | - |
dc.date.available | 2021-08-02T11:26:52Z | - |
dc.date.created | 2021-05-12 | - |
dc.date.issued | 2019-08 | - |
dc.identifier.issn | 2045-2322 | - |
dc.identifier.uri | https://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/13278 | - |
dc.description.abstract | A new design for high density integration greater than gigabits of perpendicular-magnetic-tunnel-junction (p-MTJ) spin-valve, called the double pinned (i.e., bottom and top pinned structures) p-MTJ spin-valve achieved a multi-level memory-cell operation exhibiting four-level resistances. Three key magnetic properties, the anisotropy exchange field (H-ex) of the bottom pinned structure, the coercivity (H-c) of the double free-layer, and the H-c of the top pinned structure mainly determined four-level resistances producing tunneling-magnetoresistance (TMR) ratios of 152.6%, 33.6%, and 166.5%. The three key-design concepts are: i) the bottom pinned structure with a sufficiently large H-ex to avoid a write-error, ii) the H-c of the double free-layer (i.e., similar to 0.1 kOe) much less than the H-c of the top pinned structure (i.e., similar to 1.0 kOe), and iii) the top pinned structure providing different electron spin directions. | - |
dc.language | 영어 | - |
dc.language.iso | en | - |
dc.publisher | NATURE PUBLISHING GROUP | - |
dc.title | Double Pinned Perpendicular-Magnetic-Tunnel-Junction Spin-Valve Providing Multi-level Resistance States | - |
dc.type | Article | - |
dc.contributor.affiliatedAuthor | Park, JEA GUN | - |
dc.identifier.doi | 10.1038/s41598-019-48311-0 | - |
dc.identifier.scopusid | 2-s2.0-85070778968 | - |
dc.identifier.wosid | 000480680800046 | - |
dc.identifier.bibliographicCitation | SCIENTIFIC REPORTS, v.9, no.1, pp.1 - 9 | - |
dc.relation.isPartOf | SCIENTIFIC REPORTS | - |
dc.citation.title | SCIENTIFIC REPORTS | - |
dc.citation.volume | 9 | - |
dc.citation.number | 1 | - |
dc.citation.startPage | 1 | - |
dc.citation.endPage | 9 | - |
dc.type.rims | ART | - |
dc.type.docType | Article | - |
dc.description.journalClass | 1 | - |
dc.description.isOpenAccess | Y | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Science & Technology - Other Topics | - |
dc.relation.journalWebOfScienceCategory | Multidisciplinary Sciences | - |
dc.subject.keywordPlus | ANISOTROPY | - |
dc.identifier.url | https://www.nature.com/articles/s41598-019-48311-0 | - |
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