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Improved Ferroelectric Characteristics and Synaptic Function using ALD La-doped HfO2 Thin Film and TaN Electrode

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dc.contributor.author최창환-
dc.date.accessioned2022-02-03T01:56:56Z-
dc.date.available2022-02-03T01:56:56Z-
dc.date.created2022-01-08-
dc.date.issued2021-11-15-
dc.identifier.urihttps://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/134255-
dc.publisherThe Japan Society of Applied Physcis-
dc.titleImproved Ferroelectric Characteristics and Synaptic Function using ALD La-doped HfO2 Thin Film and TaN Electrode-
dc.typeConference-
dc.contributor.affiliatedAuthor최창환-
dc.identifier.bibliographicCitationnternational Workshop on Dielectric Thin Films for Future Electron Devices - Science and Technology - (IWDTF)-
dc.relation.isPartOfnternational Workshop on Dielectric Thin Films for Future Electron Devices - Science and Technology - (IWDTF)-
dc.citation.titlenternational Workshop on Dielectric Thin Films for Future Electron Devices - Science and Technology - (IWDTF)-
dc.citation.conferencePlaceOn-line Virtual-
dc.type.rimsCONF-
dc.description.journalClass1-
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