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Ferroelectric Al-doped HfO2 Thin Film Transistors for Analog Synaptic Device
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| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | 최창환 | - |
| dc.date.accessioned | 2022-03-24T09:08:42Z | - |
| dc.date.available | 2022-03-24T09:08:42Z | - |
| dc.date.created | 2022-01-08 | - |
| dc.date.issued | 2021-01-25 | - |
| dc.identifier.uri | https://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/135904 | - |
| dc.publisher | 삼성전자/한국반도체산업협회/한국반도체연구조합 | - |
| dc.title | Ferroelectric Al-doped HfO2 Thin Film Transistors for Analog Synaptic Device | - |
| dc.type | Conference | - |
| dc.contributor.affiliatedAuthor | 최창환 | - |
| dc.identifier.bibliographicCitation | 한국반도체학술대회 (KCS) | - |
| dc.relation.isPartOf | 한국반도체학술대회 (KCS) | - |
| dc.citation.title | 한국반도체학술대회 (KCS) | - |
| dc.citation.conferencePlace | 온라인 | - |
| dc.type.rims | CONF | - |
| dc.description.journalClass | 2 | - |
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Related Researcher
- Choi, Chang hwan
- COLLEGE OF ENGINEERING (SCHOOL OF MATERIALS SCIENCE AND ENGINEERING)