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Thin Film Transistor with Ferroelectric Al-doped HfO2 Thin Film and IGZO Channel for Non-volatile Memory Application
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| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | 최창환 | - |
| dc.date.accessioned | 2022-03-24T09:08:49Z | - |
| dc.date.available | 2022-03-24T09:08:49Z | - |
| dc.date.created | 2022-01-08 | - |
| dc.date.issued | 2021-01-19 | - |
| dc.identifier.uri | https://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/135910 | - |
| dc.publisher | 나노기술연구협의회 | - |
| dc.title | Thin Film Transistor with Ferroelectric Al-doped HfO2 Thin Film and IGZO Channel for Non-volatile Memory Application | - |
| dc.type | Conference | - |
| dc.contributor.affiliatedAuthor | 최창환 | - |
| dc.identifier.bibliographicCitation | Nano Convergence Conference (NCC) | - |
| dc.relation.isPartOf | Nano Convergence Conference (NCC) | - |
| dc.citation.title | Nano Convergence Conference (NCC) | - |
| dc.citation.conferencePlace | 곤지암 리조트 | - |
| dc.type.rims | CONF | - |
| dc.description.journalClass | 2 | - |
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Collections - 서울 공과대학 > 서울 신소재공학부 > 2. Conference Papers
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Related Researcher
- Choi, Chang hwan
- COLLEGE OF ENGINEERING (SCHOOL OF MATERIALS SCIENCE AND ENGINEERING)