On ev and ve-Degree Based Topological Indices of Silicon Carbides
DC Field | Value | Language |
---|---|---|
dc.contributor.author | Lee, Jung Rye | - |
dc.contributor.author | Hussain, Aftab | - |
dc.contributor.author | Fahad, Asfand | - |
dc.contributor.author | Raza, Ali | - |
dc.contributor.author | Qureshi, Muhammad Imran | - |
dc.contributor.author | Mahboob, Abid | - |
dc.contributor.author | Park, Choonkil | - |
dc.date.accessioned | 2022-07-06T02:14:50Z | - |
dc.date.available | 2022-07-06T02:14:50Z | - |
dc.date.created | 2022-01-26 | - |
dc.date.issued | 2022-01 | - |
dc.identifier.issn | 1526-1492 | - |
dc.identifier.uri | https://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/138444 | - |
dc.description.abstract | In quantitative structure-property relationship (QSPR) and quantitative structure-activity relationship (QSAR) studies, computation of topological indices is a vital tool to predict biochemical and physio-chemical properties of chemical structures. Numerous topological indices have been inaugurated to describe different topological features. The ev and ve-degree are recently introduced novelties, having stronger prediction ability. In this article, we derive formulae of the ev-degree and ve-degree based topological indices for chemical structure of Si2C3 - I[a,b]. | - |
dc.language | 영어 | - |
dc.language.iso | en | - |
dc.publisher | TECH SCIENCE PRESS | - |
dc.title | On ev and ve-Degree Based Topological Indices of Silicon Carbides | - |
dc.type | Article | - |
dc.contributor.affiliatedAuthor | Park, Choonkil | - |
dc.identifier.doi | 10.32604/cmes.2022.016836 | - |
dc.identifier.scopusid | 2-s2.0-85122372831 | - |
dc.identifier.wosid | 000731459600011 | - |
dc.identifier.bibliographicCitation | CMES-COMPUTER MODELING IN ENGINEERING & SCIENCES, v.130, no.2, pp.871 - 885 | - |
dc.relation.isPartOf | CMES-COMPUTER MODELING IN ENGINEERING & SCIENCES | - |
dc.citation.title | CMES-COMPUTER MODELING IN ENGINEERING & SCIENCES | - |
dc.citation.volume | 130 | - |
dc.citation.number | 2 | - |
dc.citation.startPage | 871 | - |
dc.citation.endPage | 885 | - |
dc.type.rims | ART | - |
dc.type.docType | Article | - |
dc.description.journalClass | 1 | - |
dc.description.isOpenAccess | N | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Engineering | - |
dc.relation.journalResearchArea | Mathematics | - |
dc.relation.journalWebOfScienceCategory | Engineering, Multidisciplinary | - |
dc.relation.journalWebOfScienceCategory | Mathematics, Interdisciplinary Applications | - |
dc.subject.keywordPlus | DESCRIPTORS | - |
dc.subject.keywordAuthor | Topological indices | - |
dc.subject.keywordAuthor | silicon carbide | - |
dc.subject.keywordAuthor | ev-degree | - |
dc.subject.keywordAuthor | ve-degree | - |
dc.identifier.url | https://www.techscience.com/CMES/v130n2/45939 | - |
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