On ev and ve-Degree Based Topological Indices of Silicon Carbides
- Authors
- Lee, Jung Rye; Hussain, Aftab; Fahad, Asfand; Raza, Ali; Qureshi, Muhammad Imran; Mahboob, Abid; Park, Choonkil
- Issue Date
- Jan-2022
- Publisher
- TECH SCIENCE PRESS
- Keywords
- Topological indices; silicon carbide; ev-degree; ve-degree
- Citation
- CMES-COMPUTER MODELING IN ENGINEERING & SCIENCES, v.130, no.2, pp.871 - 885
- Indexed
- SCIE
SCOPUS
- Journal Title
- CMES-COMPUTER MODELING IN ENGINEERING & SCIENCES
- Volume
- 130
- Number
- 2
- Start Page
- 871
- End Page
- 885
- URI
- https://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/138444
- DOI
- 10.32604/cmes.2022.016836
- ISSN
- 1526-1492
- Abstract
- In quantitative structure-property relationship (QSPR) and quantitative structure-activity relationship (QSAR) studies, computation of topological indices is a vital tool to predict biochemical and physio-chemical properties of chemical structures. Numerous topological indices have been inaugurated to describe different topological features. The ev and ve-degree are recently introduced novelties, having stronger prediction ability. In this article, we derive formulae of the ev-degree and ve-degree based topological indices for chemical structure of Si2C3 - I[a,b].
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