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Current status on the n/p type oxide semiconductor materials and the associated devices using atomic layer deposition
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| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | Park, Jin-Seong | - |
| dc.contributor.author | Hong, TaeHyun | - |
| dc.contributor.author | Choi, Wanho | - |
| dc.contributor.author | Kim, Hyemi | - |
| dc.contributor.author | Choi, Su Hwan | - |
| dc.date.accessioned | 2022-07-06T02:21:23Z | - |
| dc.date.available | 2022-07-06T02:21:23Z | - |
| dc.date.issued | 2021-12 | - |
| dc.identifier.issn | 1883-2490 | - |
| dc.identifier.uri | https://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/138585 | - |
| dc.description.abstract | Atomic Layer Deposition (ALD) has been introduced for oxide semiconductor synthesis and the device applications. Interestingly, ALD enable to deposit not only high-performance oxide semiconductor (a-IGZO etc.) but also p-type oxide semiconductors (CuO and SnO) at low deposition temperature. It will have a great potential to solve the current material and device issues. ALD will be the emerging thin film process in the coming display application. | - |
| dc.format.extent | 4 | - |
| dc.language | 영어 | - |
| dc.language.iso | ENG | - |
| dc.title | Current status on the n/p type oxide semiconductor materials and the associated devices using atomic layer deposition | - |
| dc.type | Article | - |
| dc.identifier.scopusid | 2-s2.0-85120006550 | - |
| dc.identifier.bibliographicCitation | Proceedings of the International Display Workshops, v.27, pp 137 - 140 | - |
| dc.citation.title | Proceedings of the International Display Workshops | - |
| dc.citation.volume | 27 | - |
| dc.citation.startPage | 137 | - |
| dc.citation.endPage | 140 | - |
| dc.type.docType | Conference Paper | - |
| dc.description.isOpenAccess | N | - |
| dc.description.journalRegisteredClass | scopus | - |
| dc.subject.keywordPlus | Atoms | - |
| dc.subject.keywordPlus | Copper oxides | - |
| dc.subject.keywordPlus | Oxide semiconductors | - |
| dc.subject.keywordPlus | Semiconducting indium compounds | - |
| dc.subject.keywordPlus | Thin film circuits | - |
| dc.subject.keywordPlus | Thin film transistors | - |
| dc.subject.keywordPlus | Thin films | - |
| dc.subject.keywordPlus | Atomic layer deposition | - |
| dc.subject.keywordPlus | Atomic-layer deposition | - |
| dc.subject.keywordPlus | C. thin film transistor (TFT) | - |
| dc.subject.keywordPlus | Current status | - |
| dc.subject.keywordPlus | Device application | - |
| dc.subject.keywordPlus | N-type | - |
| dc.subject.keywordPlus | P-type | - |
| dc.subject.keywordPlus | P-type oxide semiconductors | - |
| dc.subject.keywordPlus | Performance | - |
| dc.subject.keywordPlus | Thin film transistor | - |
| dc.subject.keywordPlus | Atomic layer deposition | - |
| dc.subject.keywordAuthor | Atomic Layer Deposition (ALD) | - |
| dc.subject.keywordAuthor | N-type | - |
| dc.subject.keywordAuthor | Oxide Semiconductor | - |
| dc.subject.keywordAuthor | P-type | - |
| dc.subject.keywordAuthor | Thin Film Transistor (TFT) | - |
| dc.identifier.url | https://confit.atlas.jp/guide/event-img/idw2020/AMD1-01/public/pdf_archive?type=in | - |
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Related Researcher
- Park, Jinseong
- COLLEGE OF ENGINEERING (SCHOOL OF MATERIALS SCIENCE AND ENGINEERING)