Gate-Deterministic Remote Doping Enables Highly Retentive Graphene-MXene Hybrid Memory Devices on Plastic
- Authors
- Kim, Seongchan; Jo, Sae Byeok; Kim, Jihyun; Rhee, Dongjoon; Choi, Yoon Young; Kim, Do Hwan; Kang, Joohoon; Cho, Jeong Ho
- Issue Date
- May-2022
- Publisher
- WILEY-V C H VERLAG GMBH
- Keywords
- graphene field-effect transistors; memory devices; nano-floating-gate; synaptic-functional transistors; Ti; C-3; T-2; (X) MXene nano flakes
- Citation
- ADVANCED FUNCTIONAL MATERIALS, v.32, no.20, pp.1 - 10
- Indexed
- SCIE
SCOPUS
- Journal Title
- ADVANCED FUNCTIONAL MATERIALS
- Volume
- 32
- Number
- 20
- Start Page
- 1
- End Page
- 10
- URI
- https://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/138698
- DOI
- 10.1002/adfm.202111956
- ISSN
- 1616-301X
- Abstract
- In this work, a highly retentive and synaptic-functional transistor memory device architecture based on the gate-deterministic remote doping of graphene via surface-oxidized Ti3C2TX MXene nano-floating-gates (NFG) is presented. By using solution-phase size-sorting followed by controlled surface oxidation process, a regulated distribution of MXene nanoflakes comprising metallic Ti3C2TX as the core surrounded by TiO2-a high dielectric constant insulator-as the shell is achieved. The size-sorted core/shell-like MXene nanoflakes show a self-sustainable charge trapping/detrapping behavior, which is highly feasible for realizing non-embed NFGs for transistor memory devices. Interestingly, unlike the conventional NFG-embedded architecture, the introduction of core/shell-like MXene under an electrolyte-gated graphene field-effect transistor (GFET) architecture induces a cooperative evolution of the hysteresis loop associated with ionic motion in the electrolyte gates and charge trapping/detrapping in the nanoflakes, resulting in a deterministic remote doping of the graphene layer. The resulting device exhibited a highly retentive memory behavior, which can be optimized by the nanoflake size distribution. In addition, synaptic functions having mechanical flexibility can be successfully emulated using MXene-based GFETs fabricated on a flexible polyethylene naphthalate substrate.
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