Comparative Study of Atomic Layer Deposited Indium-Based Oxide Transistors with a Fermi Energy Level-Engineered Heterojunction Structure Channel through a Cation Combinatorial Approach
DC Field | Value | Language |
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dc.contributor.author | Cho, Min Hoe | - |
dc.contributor.author | Choi, Cheol Hee | - |
dc.contributor.author | Jeong, Jae Kyeong | - |
dc.date.accessioned | 2022-07-06T04:12:20Z | - |
dc.date.available | 2022-07-06T04:12:20Z | - |
dc.date.created | 2022-06-03 | - |
dc.date.issued | 2022-04 | - |
dc.identifier.issn | 1944-8244 | - |
dc.identifier.uri | https://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/138801 | - |
dc.description.abstract | Amorphous indium-gallium-zinc oxide (a-IGZO) has become a standard channel ingredient of switching/driving transistors in active-matrix organic light-emitting diode (AMOLED) televisions. However, mobile AMOLED displays with a high pixel density (≥500 pixels per inch) and good form factor do not often employ a-IGZO transistors due to their modest mobility (10-20 cm2/(V s)). Hybrid low-temperature polycrystalline silicon and oxide transistor (LTPO) technology is being adapted in high-end mobile AMOLED devices due to its ultralow power consumption and excellent current drivability. The critical issues of LTPO (including a complicated structure and high fabrication costs) require a search for alternative all-oxide thin-film transistors (TFTs) with low-cost processability and simple device architecture. The atomic layer deposition (ALD) method is a promising route for high-performance all-oxide TFTs due to its unique features, such as in situ cation composition tailoring ability, precise nanoscale thickness controllability, and excellent step coverage. Here, we report an in-depth comparative investigation of TFTs with indium-gallium oxide (IGO)/gallium-zinc oxide (GZO) and indium-zinc oxide (IZO)/GZO heterojunction stacks using an ALD method. IGO and IZO layers with different compositions were tested as a confinement layer (CL), whereas the GZO layer was used as a barrier layer (BL). Optimal IGO/GZO and IZO/GZO channels were carefully designed on the basis of their energy band properties, where the formation of a quasi-two-dimensional electron gas (q2DEG) near the CL/BL interface is realized by rational design of the band gaps and work-functions of the IGO, IZO, and GZO thin films. To verify the effect of q2DEG formation, the device performances and stabilities of TFTs with CL/BL oxide heterojunction stacks were examined and compared to those of TFTs with a single CL layer. The optimized device with the In0.75Zn0.25O/Ga0.80Zn0.20O stack showed remarkable electrical performance: μFEof 76.7 ± 0.51 cm2/(V s), VTHof -0.37 ± 0.19 V, SS of 0.13 ± 0.01 V/dec, and ION/OFFof 2.5 × 1010with low operation voltage range of ≥2 V and excellent stabilities (ΔVTHof +0.35, -0.67, and +0.08 V for PBTS, NBIS, and CCS, respectively). This study suggests the feasibility of using high-performance ALD-derived oxide TFTs (which can compete with the performance of LTPO transistors) for high-end mobile AMOLED displays. | - |
dc.language | 영어 | - |
dc.language.iso | en | - |
dc.publisher | American Chemical Society | - |
dc.title | Comparative Study of Atomic Layer Deposited Indium-Based Oxide Transistors with a Fermi Energy Level-Engineered Heterojunction Structure Channel through a Cation Combinatorial Approach | - |
dc.type | Article | - |
dc.contributor.affiliatedAuthor | Jeong, Jae Kyeong | - |
dc.identifier.doi | 10.1021/acsami.1c23889 | - |
dc.identifier.scopusid | 2-s2.0-85128624012 | - |
dc.identifier.wosid | 000812788800001 | - |
dc.identifier.bibliographicCitation | ACS Applied Materials and Interfaces, v.14, no.16, pp.18646 - 18661 | - |
dc.relation.isPartOf | ACS Applied Materials and Interfaces | - |
dc.citation.title | ACS Applied Materials and Interfaces | - |
dc.citation.volume | 14 | - |
dc.citation.number | 16 | - |
dc.citation.startPage | 18646 | - |
dc.citation.endPage | 18661 | - |
dc.type.rims | ART | - |
dc.type.docType | Article | - |
dc.description.journalClass | 1 | - |
dc.description.isOpenAccess | N | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Science & Technology - Other Topics | - |
dc.relation.journalResearchArea | Materials Science | - |
dc.relation.journalWebOfScienceCategory | Nanoscience & Nanotechnology | - |
dc.relation.journalWebOfScienceCategory | Materials Science, Multidisciplinary | - |
dc.subject.keywordPlus | THIN-FILM TRANSISTORS | - |
dc.subject.keywordPlus | AXIS-ALIGNED CRYSTALLINE | - |
dc.subject.keywordPlus | ELECTRONIC-STRUCTURE | - |
dc.subject.keywordPlus | HIGH-MOBILITY | - |
dc.subject.keywordPlus | PERFORMANCE | - |
dc.subject.keywordPlus | TRANSPORT | - |
dc.subject.keywordPlus | SEMICONDUCTOR | - |
dc.subject.keywordPlus | IMPACT | - |
dc.subject.keywordPlus | LASER | - |
dc.subject.keywordAuthor | atomic layer deposition | - |
dc.subject.keywordAuthor | heterojunction | - |
dc.subject.keywordAuthor | high mobility | - |
dc.subject.keywordAuthor | high-κ dielectric | - |
dc.subject.keywordAuthor | indium gallium zinc oxide | - |
dc.subject.keywordAuthor | low operation voltage | - |
dc.subject.keywordAuthor | thin-film transistor | - |
dc.identifier.url | https://pubs.acs.org/doi/10.1021/acsami.1c23889 | - |
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