Highly Stable Forming-Free Bipolar Resistive Switching in Cu Layer Stacked Amorphous Carbon Oxide: Transition between C-C Bonding Complexes
DC Field | Value | Language |
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dc.contributor.author | Hyeon, Da Seul | - |
dc.contributor.author | Jang, Gabriel | - |
dc.contributor.author | Min, SunHwa | - |
dc.contributor.author | Hong, Jin Pyo | - |
dc.date.accessioned | 2022-07-06T10:30:30Z | - |
dc.date.available | 2022-07-06T10:30:30Z | - |
dc.date.created | 2021-12-08 | - |
dc.date.issued | 2022-02 | - |
dc.identifier.issn | 2199-160X | - |
dc.identifier.uri | https://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/139675 | - |
dc.description.abstract | Recent advances in resistive switching devices have garnered a considerable amount of interest as an alternative option for next-generation nonvolatile memories due to their distinct advantages of ultralow power consumption, fast operation, and outstanding scaling potential. Among the recently considered active media, amorphous carbon oxide (alpha-C:O-x) shows promise in terms of device performance, essentially due to the transition between carbon sp(2)-sp(3) complex under bias. However, widespread utilization of this media still remains a challenge due to its undesirable high forming voltage and insufficient stability issues. Here, a simple approach to stack a suitable Cu layer at the alpha-C:O-x layer/W interface of simple Pt/alpha-C:O/W frames is introduced to engineer resistive switching characteristics. Precise control of a stacked Cu layer (2.5 nm thick) identifies numerous benefits of forming-free characteristics, reliable switching time, and appreciably stable features compared with those of single alpha-C:O-x active medium. The possible principle underlying the experimental findings is described based on the oxygen ion drift-driven transition between sp(2) and sp(3) bonds at the intermixed regions of alpha-C:O-x/Cu interfaces under bias, which are systematically confirmed by structural observations. | - |
dc.language | 영어 | - |
dc.language.iso | en | - |
dc.publisher | WILEY | - |
dc.title | Highly Stable Forming-Free Bipolar Resistive Switching in Cu Layer Stacked Amorphous Carbon Oxide: Transition between C-C Bonding Complexes | - |
dc.type | Article | - |
dc.contributor.affiliatedAuthor | Hong, Jin Pyo | - |
dc.identifier.doi | 10.1002/aelm.202100660 | - |
dc.identifier.scopusid | 2-s2.0-85118851915 | - |
dc.identifier.wosid | 000717198900001 | - |
dc.identifier.bibliographicCitation | ADVANCED ELECTRONIC MATERIALS, v.8, no.2, pp.1 - 9 | - |
dc.relation.isPartOf | ADVANCED ELECTRONIC MATERIALS | - |
dc.citation.title | ADVANCED ELECTRONIC MATERIALS | - |
dc.citation.volume | 8 | - |
dc.citation.number | 2 | - |
dc.citation.startPage | 1 | - |
dc.citation.endPage | 9 | - |
dc.type.rims | ART | - |
dc.type.docType | Article; Early Access | - |
dc.description.journalClass | 1 | - |
dc.description.isOpenAccess | Y | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Science & Technology - Other Topics | - |
dc.relation.journalResearchArea | Materials Science | - |
dc.relation.journalResearchArea | Physics | - |
dc.relation.journalWebOfScienceCategory | Nanoscience & Nanotechnology | - |
dc.relation.journalWebOfScienceCategory | Materials Science, Multidisciplinary | - |
dc.relation.journalWebOfScienceCategory | Physics, Applied | - |
dc.subject.keywordPlus | MECHANISMS | - |
dc.subject.keywordPlus | MEMORY | - |
dc.subject.keywordPlus | GRAPHENE | - |
dc.subject.keywordPlus | DEVICE | - |
dc.subject.keywordAuthor | alpha-C:O-x active layer | - |
dc.subject.keywordAuthor | Cu stacked layer | - |
dc.subject.keywordAuthor | forming-free response | - |
dc.subject.keywordAuthor | off-axis sputtering | - |
dc.subject.keywordAuthor | sp(2) bond conductive filaments | - |
dc.identifier.url | https://onlinelibrary.wiley.com/doi/10.1002/aelm.202100660 | - |
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