Recent progress and perspectives on atomic-layer-deposited semiconducting oxides for transistor applications
DC Field | Value | Language |
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dc.contributor.author | Cho, Min Hoe | - |
dc.contributor.author | Choi, Cheol Hee | - |
dc.contributor.author | Jeong, Jae Kyeong | - |
dc.date.accessioned | 2022-07-06T10:40:21Z | - |
dc.date.available | 2022-07-06T10:40:21Z | - |
dc.date.created | 2022-01-26 | - |
dc.date.issued | 2022-01 | - |
dc.identifier.issn | 1071-0922 | - |
dc.identifier.uri | https://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/139826 | - |
dc.description.abstract | This paper reviews recent developments in the fabrication of high-performance n-channel metal-oxide thin-film transistors (TFTs) through atomic-layer deposition (ALD), which are now attracting attention due to their potential for use in augmented and virtual reality, ultra-high-definition organic light-emitting diodes, and flexible electronics. Recent trends in research on TFT backplanes for display applications are provided in the introduction. In the main section, ALD-derived n-type oxides serving as active layers are classified into binary, ternary, and quaternary systems, and recent developments and critical issues in n-channel oxide TFTs are described. The performance of n-channel oxide TFTs can be boosted through advanced architectures, including stacked heterojunction channels using two-dimensional electron gases, and the introduction of high-k dielectric such as ALD-derived hafnium oxide, which is highlighted in this review. Finally, progress in p-channel ALD-derived oxide TFTs is briefly addressed with respect to complementary metal-oxide-semiconductor applications. | - |
dc.language | 영어 | - |
dc.language.iso | en | - |
dc.publisher | WILEY | - |
dc.title | Recent progress and perspectives on atomic-layer-deposited semiconducting oxides for transistor applications | - |
dc.type | Article | - |
dc.contributor.affiliatedAuthor | Jeong, Jae Kyeong | - |
dc.identifier.doi | 10.1002/jsid.1096 | - |
dc.identifier.scopusid | 2-s2.0-85122821496 | - |
dc.identifier.wosid | 000741303000001 | - |
dc.identifier.bibliographicCitation | JOURNAL OF THE SOCIETY FOR INFORMATION DISPLAY, v.30, no.3, pp.175 - 197 | - |
dc.relation.isPartOf | JOURNAL OF THE SOCIETY FOR INFORMATION DISPLAY | - |
dc.citation.title | JOURNAL OF THE SOCIETY FOR INFORMATION DISPLAY | - |
dc.citation.volume | 30 | - |
dc.citation.number | 3 | - |
dc.citation.startPage | 175 | - |
dc.citation.endPage | 197 | - |
dc.type.rims | ART | - |
dc.type.docType | Article; Early Access | - |
dc.description.journalClass | 1 | - |
dc.description.isOpenAccess | N | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Engineering | - |
dc.relation.journalResearchArea | Materials Science | - |
dc.relation.journalResearchArea | Optics | - |
dc.relation.journalResearchArea | Physics | - |
dc.relation.journalWebOfScienceCategory | Engineering, Electrical & Electronic | - |
dc.relation.journalWebOfScienceCategory | Materials Science, Multidisciplinary | - |
dc.relation.journalWebOfScienceCategory | Optics | - |
dc.relation.journalWebOfScienceCategory | Physics, Applied | - |
dc.subject.keywordPlus | THIN-FILM TRANSISTORS | - |
dc.subject.keywordPlus | LOW-TEMPERATURE | - |
dc.subject.keywordPlus | ZINC-OXIDE | - |
dc.subject.keywordPlus | ELECTRICAL-PROPERTIES | - |
dc.subject.keywordPlus | OXYGEN VACANCY | - |
dc.subject.keywordPlus | PERFORMANCE | - |
dc.subject.keywordPlus | CHANNEL | - |
dc.subject.keywordPlus | AL2O3 | - |
dc.subject.keywordPlus | HYDROGEN | - |
dc.subject.keywordPlus | SILICON | - |
dc.subject.keywordAuthor | AR | - |
dc.subject.keywordAuthor | VR | - |
dc.subject.keywordAuthor | atomic layer deposition | - |
dc.subject.keywordAuthor | flat panel display | - |
dc.subject.keywordAuthor | indium gallium zinc oxide | - |
dc.subject.keywordAuthor | oxide semiconductor | - |
dc.subject.keywordAuthor | thin-film transistor | - |
dc.identifier.url | https://sid.onlinelibrary.wiley.com/doi/10.1002/jsid.1096 | - |
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