Sputter-grown GeTe/Sb2Te3 superlattice interfacial phase change memory for low power and multi-level-cell operation
DC Field | Value | Language |
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dc.contributor.author | Jin, Soo-Min | - |
dc.contributor.author | Kang, Shin-Young | - |
dc.contributor.author | Kim, Hea-Jee | - |
dc.contributor.author | Lee, Ju-Young | - |
dc.contributor.author | Nam, In-Ho | - |
dc.contributor.author | Shim, Tae-Hun | - |
dc.contributor.author | Song, Yun-Heub | - |
dc.contributor.author | Park, Jea-Gun | - |
dc.date.accessioned | 2022-07-06T10:47:48Z | - |
dc.date.available | 2022-07-06T10:47:48Z | - |
dc.date.created | 2021-12-08 | - |
dc.date.issued | 2022-01 | - |
dc.identifier.issn | 0013-5194 | - |
dc.identifier.uri | https://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/139927 | - |
dc.description.abstract | The multi-level feature of GeTe/Sb2Te3 interfacial phase change memory was achieved by applying a designed voltage-based pulse. It stably demonstrated five multi-level states without interference for 90 cycles by varying the pulse width. GeTe/Sb2Te3 interfacial phase change memory demonstrated retention time of > 1.0 x 10(3) s, presenting the significantly low drift coefficient (nu) of < 0.009, indicating no resistivity drift due to the structure relaxation of glass. In addition, the reset energy consumption of GeTe/Sb2Te3 interfacial phase change memory was reduced by more than 85% compared to conventional Ge2Sb2Te5 phase change memory at each bottom electrode contact size. Multi-level-cell operation mechanism and gradual increase in conductance value of GeTe/Sb2Te3 interfacial phase change memory was explained by a partial resistance transition model where phase transition occurred partially in all layers. The result of the GeTe/Sb2Te3 interfacial phase change memory performance is expected to bring great advantages to the next-generation storage class memory industry that requires low energy and high density. | - |
dc.language | 영어 | - |
dc.language.iso | en | - |
dc.publisher | WILEY | - |
dc.title | Sputter-grown GeTe/Sb2Te3 superlattice interfacial phase change memory for low power and multi-level-cell operation | - |
dc.type | Article | - |
dc.contributor.affiliatedAuthor | Song, Yun-Heub | - |
dc.contributor.affiliatedAuthor | Park, Jea-Gun | - |
dc.identifier.doi | 10.1049/ell2.12337 | - |
dc.identifier.scopusid | 2-s2.0-85125598314 | - |
dc.identifier.wosid | 000706105500001 | - |
dc.identifier.bibliographicCitation | ELECTRONICS LETTERS, v.58, no.1, pp.38 - 40 | - |
dc.relation.isPartOf | ELECTRONICS LETTERS | - |
dc.citation.title | ELECTRONICS LETTERS | - |
dc.citation.volume | 58 | - |
dc.citation.number | 1 | - |
dc.citation.startPage | 38 | - |
dc.citation.endPage | 40 | - |
dc.type.rims | ART | - |
dc.type.docType | Article; Early Access | - |
dc.description.journalClass | 1 | - |
dc.description.isOpenAccess | Y | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Engineering | - |
dc.relation.journalWebOfScienceCategory | Engineering, Electrical & Electronic | - |
dc.subject.keywordPlus | Antimony compounds | - |
dc.subject.keywordPlus | Energy utilization | - |
dc.subject.keywordPlus | Germanium alloys | - |
dc.subject.keywordPlus | Germanium compounds | - |
dc.subject.keywordPlus | Tellurium compounds | - |
dc.subject.keywordPlus | Phase change memory | - |
dc.subject.keywordPlus | Cell operation | - |
dc.subject.keywordPlus | Drift coefficient | - |
dc.subject.keywordPlus | Interfacial phase | - |
dc.subject.keywordPlus | Low Power | - |
dc.subject.keywordPlus | Multilevels | - |
dc.subject.keywordPlus | Phase-change memory | - |
dc.subject.keywordPlus | Power levels | - |
dc.subject.keywordPlus | Pulsewidths | - |
dc.subject.keywordPlus | Pulswidths | - |
dc.subject.keywordPlus | Retention time | - |
dc.identifier.url | https://ietresearch.onlinelibrary.wiley.com/doi/10.1049/ell2.12337 | - |
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