Two-terminal vertical thyristor using Schottky contact emitter to improve thermal instability
DC Field | Value | Language |
---|---|---|
dc.contributor.author | Kim, Min-Won | - |
dc.contributor.author | Kim, Ji-Hun | - |
dc.contributor.author | Park, Jun-Seong | - |
dc.contributor.author | Lee, Byoung-Seok | - |
dc.contributor.author | Yoo, Sang-Dong | - |
dc.contributor.author | Shim, Tae-Hun | - |
dc.contributor.author | Park, Jea-Gun | - |
dc.date.accessioned | 2022-07-06T10:54:38Z | - |
dc.date.available | 2022-07-06T10:54:38Z | - |
dc.date.created | 2022-01-26 | - |
dc.date.issued | 2021-12 | - |
dc.identifier.issn | 2399-1984 | - |
dc.identifier.uri | https://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/140078 | - |
dc.description.abstract | In a two-terminal-electrode vertical thyristor, the latch-up and latch-down voltages are decreased when the memory operation temperature of the memory cells increases, resulting in a severe reliability issue (i.e. thermal instability). This study fundamentally solves the thermal instability of a vertical-thyristor by achieving a cross-point memory-cell array using a vertical-thyristor with a structure of vertical n(++)-emitter, p(+)-base, n(+)-base, and p(++)-emitter. The vertical-thyristor using a Schottky contact metal emitter instead of an n(++)-Si emitter significantly improves the thermal stability between 293 K and 373 K. Particularly, the improvement degree of the thermal stability is increased significantly with the use of the Schottky contact metal work function. Because the thermal instability (i.e. degree of latch-up voltage decrement vs. memory operation temperature) decreases with an increase in the Schottky contact metal work function, the dependency of the forward current density between the Schottky contact metal and p(+)-Si based on the memory operation temperature reduces with increase in the Schottky contact metal work function. Consequently, a higher Schottky contact metal work function produces a higher degree of improvement in the thermal stability, i.e. W (4.50 eV), Ti (4.33 eV), Ta (4.25 eV), and Al (4.12 eV). Further research on the fabrication process of a Schottky contact metal emitter vertical-thyristor is essential for the fabrication of a 3D cross-point memory-cell. | - |
dc.language | 영어 | - |
dc.language.iso | en | - |
dc.publisher | IOP PUBLISHING LTD | - |
dc.title | Two-terminal vertical thyristor using Schottky contact emitter to improve thermal instability | - |
dc.type | Article | - |
dc.contributor.affiliatedAuthor | Park, Jea-Gun | - |
dc.identifier.doi | 10.1088/2399-1984/ac3bd4 | - |
dc.identifier.scopusid | 2-s2.0-85123643698 | - |
dc.identifier.wosid | 000735212300001 | - |
dc.identifier.bibliographicCitation | NANO FUTURES, v.5, no.4, pp.1 - 9 | - |
dc.relation.isPartOf | NANO FUTURES | - |
dc.citation.title | NANO FUTURES | - |
dc.citation.volume | 5 | - |
dc.citation.number | 4 | - |
dc.citation.startPage | 1 | - |
dc.citation.endPage | 9 | - |
dc.type.rims | ART | - |
dc.type.docType | Article | - |
dc.description.journalClass | 1 | - |
dc.description.isOpenAccess | N | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Science & Technology - Other Topics | - |
dc.relation.journalResearchArea | Materials Science | - |
dc.relation.journalResearchArea | Physics | - |
dc.relation.journalWebOfScienceCategory | Nanoscience & Nanotechnology | - |
dc.relation.journalWebOfScienceCategory | Materials Science, Multidisciplinary | - |
dc.relation.journalWebOfScienceCategory | Physics, Applied | - |
dc.subject.keywordPlus | Memory architecture | - |
dc.subject.keywordPlus | Metals | - |
dc.subject.keywordPlus | Semiconductor storage | - |
dc.subject.keywordPlus | Thyristors | - |
dc.subject.keywordPlus | Work function | - |
dc.subject.keywordPlus | Thermodynamic stability | - |
dc.subject.keywordPlus | Capacitor-less | - |
dc.subject.keywordPlus | Capacitorless memory | - |
dc.subject.keywordPlus | Contact metal work functions | - |
dc.subject.keywordPlus | Cross-point memory | - |
dc.subject.keywordPlus | Half-bias scheme | - |
dc.subject.keywordPlus | Memory operations | - |
dc.subject.keywordPlus | Operation temperature | - |
dc.subject.keywordPlus | Schottky contacts | - |
dc.subject.keywordPlus | Thermal instabilities | - |
dc.subject.keywordPlus | Two terminals | - |
dc.subject.keywordAuthor | thyristor | - |
dc.subject.keywordAuthor | cross-point memory | - |
dc.subject.keywordAuthor | half-bias scheme | - |
dc.subject.keywordAuthor | capacitorless memory | - |
dc.subject.keywordAuthor | Schottky contact | - |
dc.identifier.url | https://iopscience.iop.org/article/10.1088/2399-1984/ac3bd4 | - |
Items in ScholarWorks are protected by copyright, with all rights reserved, unless otherwise indicated.
222, Wangsimni-ro, Seongdong-gu, Seoul, 04763, Korea+82-2-2220-1365
COPYRIGHT © 2021 HANYANG UNIVERSITY.
Certain data included herein are derived from the © Web of Science of Clarivate Analytics. All rights reserved.
You may not copy or re-distribute this material in whole or in part without the prior written consent of Clarivate Analytics.