Monolithic low-temperature fabrication of amorphous indium oxide thin-film transistors utilizing a selective hydrogen doping technique
- Authors
- Seo, Hojun; Kim, Sunjin; Lee, Jeongsu; Sul, Onejae; Lee, Seung-Beck
- Issue Date
- Dec-2021
- Publisher
- AMER INST PHYSICS
- Citation
- APPLIED PHYSICS LETTERS, v.119, no.26, pp.1 - 6
- Indexed
- SCIE
SCOPUS
- Journal Title
- APPLIED PHYSICS LETTERS
- Volume
- 119
- Number
- 26
- Start Page
- 1
- End Page
- 6
- URI
- https://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/140090
- DOI
- 10.1063/5.0071563
- ISSN
- 0003-6951
- Abstract
- Selective doping is a key technology for integrated circuit (IC) fabrication since it enables ultrahigh density transistors with various electrical characteristics to be integrated on a single substrate. Also, for vertical IC integration, low-processing temperature compatibility is an essential feature since the annealing of additional ICs fabricated on top should not compromise the characteristics of underlying ICs. For amorphous oxide semiconductor (AOS) thin-films, which are actively being pursued for vertical integration, a selective doping process combined with a low temperature activation thermal annealing process has not been demonstrated. In this Letter, we demonstrate a low-temperature selective doping process that enables selective multi-level n-type doping of insulating amorphous In2O3 (a-In2O3) thin-films. By applying multiple H plasma processes on lithographically defined areas, a monolithic planar In2O3 inverter circuit was demonstrated. Also, the doping process was used to fabricate and demonstrate the operation of an In2O3 thin-film transistor with a 30 nm spaced channel, showing that our process may be used for back-end-of-line vertical integration of AOS devices.
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