Reducing Refresh Overhead with In-DRAM Error Correction Codes
DC Field | Value | Language |
---|---|---|
dc.contributor.author | Kwon,Hanbyeol | - |
dc.contributor.author | Kim, Kwangrae | - |
dc.contributor.author | Jeon, Dongsuk | - |
dc.contributor.author | Chung, Ki Seok | - |
dc.date.accessioned | 2022-07-06T11:33:25Z | - |
dc.date.available | 2022-07-06T11:33:25Z | - |
dc.date.created | 2022-03-07 | - |
dc.date.issued | 2021-11 | - |
dc.identifier.issn | 2163-9612 | - |
dc.identifier.uri | https://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/140376 | - |
dc.description.abstract | DRAM technology scaling has continuously improved memory density, but the limited cell capacitance makes more susceptible to reliability issues. Hence, it has become inevitable to employ in-DRAM ECC. Also, the performance and power consumption overhead due to refresh operations have become a critical issue as the DRAM density increases. Therefore, it is very important to reduce the refresh overhead without sacrificing the reliability of DRAM. In this paper, we propose a retention-Aware refresh scheme with in-DRAM ECC. The key idea of our proposed method is that the in-DRAM ECC can correct a single-bit error, and this will effectively reduce the number of weak rows that have to be refreshed every 64ms. Also, a runtime profiler is proposed to keep up-To-date information of weak rows to solve the variable retention time problem. Our experiments with SPEC benchmarks show up to 6.8% performance improvement of performance, and up to 15.4% reduction of power consumption compared with the conventional refresh schemes. | - |
dc.language | 영어 | - |
dc.language.iso | en | - |
dc.publisher | IEEE | - |
dc.title | Reducing Refresh Overhead with In-DRAM Error Correction Codes | - |
dc.type | Article | - |
dc.contributor.affiliatedAuthor | Chung, Ki Seok | - |
dc.identifier.doi | 10.1109/ISOCC53507.2021.9613990 | - |
dc.identifier.scopusid | 2-s2.0-85123380193 | - |
dc.identifier.wosid | 000861550500095 | - |
dc.identifier.bibliographicCitation | Proceedings - International SoC Design Conference 2021, ISOCC 2021, pp.211 - 214 | - |
dc.relation.isPartOf | Proceedings - International SoC Design Conference 2021, ISOCC 2021 | - |
dc.citation.title | Proceedings - International SoC Design Conference 2021, ISOCC 2021 | - |
dc.citation.startPage | 211 | - |
dc.citation.endPage | 214 | - |
dc.type.rims | ART | - |
dc.type.docType | Proceedings Paper | - |
dc.description.journalClass | 1 | - |
dc.description.isOpenAccess | N | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Computer Science | - |
dc.relation.journalResearchArea | Engineering | - |
dc.relation.journalWebOfScienceCategory | Computer Science, Hardware & Architecture | - |
dc.relation.journalWebOfScienceCategory | Engineering, Electrical & Electronic | - |
dc.subject.keywordPlus | Benchmarking | - |
dc.subject.keywordPlus | Cost reduction | - |
dc.subject.keywordPlus | Dynamic random access storage | - |
dc.subject.keywordPlus | Error correction | - |
dc.subject.keywordPlus | Memory architecture | - |
dc.subject.keywordPlus | Cell capacitance | - |
dc.subject.keywordPlus | Critical issues | - |
dc.subject.keywordPlus | DRAM technology | - |
dc.subject.keywordPlus | Error correction codes | - |
dc.subject.keywordPlus | In-DRAM ECC | - |
dc.subject.keywordPlus | Memory density | - |
dc.subject.keywordPlus | Performance | - |
dc.subject.keywordPlus | Retention-aware refresh | - |
dc.subject.keywordPlus | Single bit error | - |
dc.subject.keywordPlus | Technology scaling | - |
dc.subject.keywordPlus | Electric power utilization | - |
dc.subject.keywordAuthor | In-DRAM ECC | - |
dc.subject.keywordAuthor | Retention-Aware Refresh | - |
dc.identifier.url | https://ieeexplore.ieee.org/document/9613990 | - |
Items in ScholarWorks are protected by copyright, with all rights reserved, unless otherwise indicated.
222, Wangsimni-ro, Seongdong-gu, Seoul, 04763, Korea+82-2-2220-1365
COPYRIGHT © 2021 HANYANG UNIVERSITY.
Certain data included herein are derived from the © Web of Science of Clarivate Analytics. All rights reserved.
You may not copy or re-distribute this material in whole or in part without the prior written consent of Clarivate Analytics.