Quasi-2D Halide Perovskite Memory Device Formed by Acid-Base Binary Ligand Solution Composed of Oleylamine and Oleic Acid
- Authors
- Jeong, Hyeon Jun; Park, Chulho; Jeon, Hobeom; Lee, Kang-Nyeoung; Lee, Juchan; Lim, Seong Chu; Namkoong, Gon; Jeong, Mun Seok
- Issue Date
- Sep-2021
- Publisher
- AMER CHEMICAL SOC
- Keywords
- Quasi-2D perovskite; acid-base reaction; oleylamine; oleic acid; binary ligand; write-once read-many memory (WORM) device; protonation
- Citation
- ACS APPLIED MATERIALS & INTERFACES, v.13, no.34, pp.40891 - 40900
- Indexed
- SCIE
SCOPUS
- Journal Title
- ACS APPLIED MATERIALS & INTERFACES
- Volume
- 13
- Number
- 34
- Start Page
- 40891
- End Page
- 40900
- URI
- https://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/141115
- DOI
- 10.1021/acsami.1c09725
- ISSN
- 1944-8244
- Abstract
- Organometal halide perovskite materials are receiving significant attention for the fabrication of resistive-switching memory devices based on their high stability, low power consumption, rapid switching, and high ON/OFF ratios. In this study, we synthesized 3D FAPbBr(3) and quasi-2D (RNH3)(2)(FA)(1)Pb2Br7 films using an acid-base binary ligand solution composed of oleylamine (OlAm) and oleic acid in toluene. The quasi-2D (RNH3)(2)(FA)(1)Pb2Br7 films were synthesized by controlling the protonated OlAm (RNH3+) solution concentration to replace FA(+) cations with large organic RNH3+ cations from 3D FAPbBr(3) perovskites. The quasi-2D (RNH3)(2)(FA)(1)Pb2Br7 devices exhibited nonvolatile write-once read-many (WORM) memory characteristics, whereas the 3D FAPbBr(3)D only exhibited hysteresis behavior. Analysis of the 3D FAPbBr(3) device indicated operation in the trap-limited space-charge-limited current region. In contrast, quasi-2D (RNH3)(2)(FA)(1)Pb2Br7 devices provide low trap density that is completely filled by injected charge carriers and then subsequently form conductive filaments (CFs) to operate as WORM devices. Nanoscale morphology analysis and an associated current mapping study based on conductive atomic force microscopy measurements revealed that perovskite grain boundaries serve as major channels for high current, which may be correlated with the conductive low-resistive-switching behavior and formation of CFs in WORM devices.
- Files in This Item
- There are no files associated with this item.
- Appears in
Collections - 서울 자연과학대학 > 서울 물리학과 > 1. Journal Articles
![qrcode](https://api.qrserver.com/v1/create-qr-code/?size=55x55&data=https://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/141115)
Items in ScholarWorks are protected by copyright, with all rights reserved, unless otherwise indicated.