Y Super fine cerium hydroxide abrasives for-SiO2 film chemical mechanical planarization performing scratch free
DC Field | Value | Language |
---|---|---|
dc.contributor.author | Son, Young-Hye | - |
dc.contributor.author | Jeong, Gi-Ppeum | - |
dc.contributor.author | Kim, Pil-Su | - |
dc.contributor.author | Han, Man-Hyup | - |
dc.contributor.author | Hong, Seong-Wan | - |
dc.contributor.author | Bae, Jae-Young | - |
dc.contributor.author | Kim, Sung-In | - |
dc.contributor.author | Park, Jin-Hyung | - |
dc.contributor.author | Park, Jea-Gun | - |
dc.date.accessioned | 2022-07-06T14:41:06Z | - |
dc.date.available | 2022-07-06T14:41:06Z | - |
dc.date.created | 2021-11-22 | - |
dc.date.issued | 2021-09 | - |
dc.identifier.issn | 2045-2322 | - |
dc.identifier.uri | https://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/141144 | - |
dc.description.abstract | Face-centered-cubic crystallized super-fine (= 2 nm in size) wet-ceria-abrasives are synthesized using a novel wet precipitation process that comprises a Ce4+ precursor, C3H4N2 catalyst, and NaOH titrant for a synthesized termination process at temperature of at temperature of 25 degrees C. This process overcomes the limitations of chemical-mechanical-planarization (CMP)-induced scratches from conventional dry ceria abrasives with irregular surfaces or wet ceria abrasives with crystalline facets in nanoscale semiconductor devices. The chemical composition of super-fine wet ceria abrasives depends on the synthesis termination pH, that is, Ce(OH)(4) abrasives at a pH of 4.0-5.0 and a mixture of -CeO2 and Ce(OH)(4) abrasives at a pH of 5.5- 6.5. The Ce(OH)(4) abrasives demonstrate better abrasive stability in the SiO2-film CMP slurry than the CeO2 abrasives and produce a minimum abrasive zeta potential (similar to 12 mV) and a minimum secondary abrasive size (similar to 130 nm) at the synthesis termination pH of 5.0. Additionally, the abrasive stability of the SiO2-film CMP slurry that includes super-fine wet ceria abrasives is notably sensitive to the CMP slurry pH; the best abrasive stability (i.e., a minimum secondary abrasive size of similar to 130 nm) is observed at a specific pH (6.0). As a result, a maximum SiO2 film polishing rate (similar to 524 nm/ min) is achieved at pH 6.0, and the surface is free of stick-and-slip type scratches. | - |
dc.language | 영어 | - |
dc.language.iso | en | - |
dc.publisher | NATURE PORTFOLIO | - |
dc.title | Y Super fine cerium hydroxide abrasives for-SiO2 film chemical mechanical planarization performing scratch free | - |
dc.type | Article | - |
dc.contributor.affiliatedAuthor | Park, Jea-Gun | - |
dc.identifier.doi | 10.1038/s41598-021-97122-9 | - |
dc.identifier.scopusid | 2-s2.0-85114595049 | - |
dc.identifier.wosid | 000694653700035 | - |
dc.identifier.bibliographicCitation | Scientific Reports, v.11, no.1, pp.1 - 10 | - |
dc.relation.isPartOf | Scientific Reports | - |
dc.citation.title | Scientific Reports | - |
dc.citation.volume | 11 | - |
dc.citation.number | 1 | - |
dc.citation.startPage | 1 | - |
dc.citation.endPage | 10 | - |
dc.type.rims | ART | - |
dc.type.docType | Article | - |
dc.description.journalClass | 1 | - |
dc.description.isOpenAccess | Y | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Science & Technology - Other Topics | - |
dc.relation.journalWebOfScienceCategory | Multidisciplinary Sciences | - |
dc.subject.keywordPlus | NANOPARTICLES | - |
dc.subject.keywordPlus | FUTURE | - |
dc.subject.keywordPlus | SIZE | - |
dc.subject.keywordPlus | STEP | - |
dc.subject.keywordPlus | CMP | - |
dc.identifier.url | https://www.nature.com/articles/s41598-021-97122-9 | - |
Items in ScholarWorks are protected by copyright, with all rights reserved, unless otherwise indicated.
222, Wangsimni-ro, Seongdong-gu, Seoul, 04763, Korea+82-2-2220-1365
COPYRIGHT © 2021 HANYANG UNIVERSITY.
Certain data included herein are derived from the © Web of Science of Clarivate Analytics. All rights reserved.
You may not copy or re-distribute this material in whole or in part without the prior written consent of Clarivate Analytics.