Transferable, flexible white light-emitting diodes of GaN p–n junction microcrystals fabricated by remote epitaxy
DC Field | Value | Language |
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dc.contributor.author | Jeong, Junseok | - |
dc.contributor.author | Jin, Dae Kwon | - |
dc.contributor.author | Choi, Joonghoon | - |
dc.contributor.author | Jang, Junho | - |
dc.contributor.author | Kang, Bong Kyun | - |
dc.contributor.author | Wang, Qingxiao | - |
dc.contributor.author | Park, Won Il | - |
dc.contributor.author | Jeong, Mun Seok | - |
dc.contributor.author | Bae, Byeong-Soo | - |
dc.contributor.author | Yang, Woo Seok | - |
dc.contributor.author | Kim, Moon J. | - |
dc.contributor.author | Hong, Young Joon | - |
dc.date.accessioned | 2022-07-06T16:03:59Z | - |
dc.date.available | 2022-07-06T16:03:59Z | - |
dc.date.created | 2021-07-14 | - |
dc.date.issued | 2021-08 | - |
dc.identifier.issn | 2211-2855 | - |
dc.identifier.uri | https://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/141429 | - |
dc.description.abstract | The remote epitaxy of GaN p–n homojunction microcrystals (μCs) is demonstrated for fabricating transferable, flexible white light-emitting diodes (WLEDs). The GaN p–n junction μCs are randomly grown on graphene-coated Al2O3(0001), which are then delaminated for mass-transfer onto conducting copper tape. The μCs-LED shows electrical rectification and white electroluminescence (EL) emission. The μCs-WLED exhibits reliable LED performances after repetitive bending deformations and cycling temperature environments. Based on the transferability, the μCs-WLEDs are patterned and assembled to matrix arrays, which exhibit homogeneous, reliable performances even at a bent form. We discuss that the origin of white EL emission is mixing of blue and yellow–red EL emissions from p-GaN and n-GaN sides, respectively, based on photoluminescence spectroscopic measurements. This study opens a way of fabricating the transferable, flexible, and modular light panels through remote epitaxy. | - |
dc.language | 영어 | - |
dc.language.iso | en | - |
dc.publisher | Elsevier Ltd | - |
dc.title | Transferable, flexible white light-emitting diodes of GaN p–n junction microcrystals fabricated by remote epitaxy | - |
dc.type | Article | - |
dc.contributor.affiliatedAuthor | Park, Won Il | - |
dc.contributor.affiliatedAuthor | Jeong, Mun Seok | - |
dc.identifier.doi | 10.1016/j.nanoen.2021.106075 | - |
dc.identifier.scopusid | 2-s2.0-85105566609 | - |
dc.identifier.wosid | 000672567200004 | - |
dc.identifier.bibliographicCitation | Nano Energy, v.86, pp.1 - 12 | - |
dc.relation.isPartOf | Nano Energy | - |
dc.citation.title | Nano Energy | - |
dc.citation.volume | 86 | - |
dc.citation.startPage | 1 | - |
dc.citation.endPage | 12 | - |
dc.type.rims | ART | - |
dc.type.docType | Article | - |
dc.description.journalClass | 1 | - |
dc.description.isOpenAccess | N | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Chemistry | - |
dc.relation.journalResearchArea | Science & Technology - Other Topics | - |
dc.relation.journalResearchArea | Materials Science | - |
dc.relation.journalResearchArea | Physics | - |
dc.relation.journalWebOfScienceCategory | Chemistry, Physical | - |
dc.relation.journalWebOfScienceCategory | Nanoscience & Nanotechnology | - |
dc.relation.journalWebOfScienceCategory | Materials Science, Multidisciplinary | - |
dc.relation.journalWebOfScienceCategory | Physics, Applied | - |
dc.subject.keywordPlus | Alumina | - |
dc.subject.keywordPlus | Aluminum oxide | - |
dc.subject.keywordPlus | Electroluminescence | - |
dc.subject.keywordPlus | Fabrication | - |
dc.subject.keywordPlus | Gallium nitride | - |
dc.subject.keywordPlus | Heterojunctions | - |
dc.subject.keywordPlus | III-V semiconductors | - |
dc.subject.keywordPlus | Light | - |
dc.subject.keywordPlus | Mass transfer | - |
dc.subject.keywordPlus | Microcrystals | - |
dc.subject.keywordPlus | Cycling temperatures | - |
dc.subject.keywordPlus | Deformation temperatures | - |
dc.subject.keywordPlus | Electroluminescence emission | - |
dc.subject.keywordPlus | Flexible device | - |
dc.subject.keywordPlus | P-n junction | - |
dc.subject.keywordPlus | P/n homojunctions | - |
dc.subject.keywordPlus | Performance | - |
dc.subject.keywordPlus | Remote epitaxy | - |
dc.subject.keywordPlus | Transfer | - |
dc.subject.keywordPlus | White light emitting diodes | - |
dc.subject.keywordPlus | Light emitting diodes | - |
dc.subject.keywordAuthor | Flexible device | - |
dc.subject.keywordAuthor | GaN | - |
dc.subject.keywordAuthor | p–n junction | - |
dc.subject.keywordAuthor | Remote epitaxy | - |
dc.subject.keywordAuthor | Transfer | - |
dc.subject.keywordAuthor | White light emitting diode | - |
dc.identifier.url | https://www.sciencedirect.com/science/article/pii/S2211285521003323?via%3Dihub | - |
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