Transferable, flexible white light-emitting diodes of GaN p–n junction microcrystals fabricated by remote epitaxy
- Authors
- Jeong, Junseok; Jin, Dae Kwon; Choi, Joonghoon; Jang, Junho; Kang, Bong Kyun; Wang, Qingxiao; Park, Won Il; Jeong, Mun Seok; Bae, Byeong-Soo; Yang, Woo Seok; Kim, Moon J.; Hong, Young Joon
- Issue Date
- Aug-2021
- Publisher
- Elsevier Ltd
- Keywords
- Flexible device; GaN; p–n junction; Remote epitaxy; Transfer; White light emitting diode
- Citation
- Nano Energy, v.86, pp.1 - 12
- Indexed
- SCIE
SCOPUS
- Journal Title
- Nano Energy
- Volume
- 86
- Start Page
- 1
- End Page
- 12
- URI
- https://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/141429
- DOI
- 10.1016/j.nanoen.2021.106075
- ISSN
- 2211-2855
- Abstract
- The remote epitaxy of GaN p–n homojunction microcrystals (μCs) is demonstrated for fabricating transferable, flexible white light-emitting diodes (WLEDs). The GaN p–n junction μCs are randomly grown on graphene-coated Al2O3(0001), which are then delaminated for mass-transfer onto conducting copper tape. The μCs-LED shows electrical rectification and white electroluminescence (EL) emission. The μCs-WLED exhibits reliable LED performances after repetitive bending deformations and cycling temperature environments. Based on the transferability, the μCs-WLEDs are patterned and assembled to matrix arrays, which exhibit homogeneous, reliable performances even at a bent form. We discuss that the origin of white EL emission is mixing of blue and yellow–red EL emissions from p-GaN and n-GaN sides, respectively, based on photoluminescence spectroscopic measurements. This study opens a way of fabricating the transferable, flexible, and modular light panels through remote epitaxy.
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