Simple Bithiophene-Rhodanine-Based Small Molecule Acceptor for Use in Additive-Free Nonfullerene OPVs with Low Energy Loss of 0.51 eV
- Authors
- Lee, Taeho; Eom, Yoonho; Song, Chang Eun; Jung, In Hwan; Kim, Dongwook; Lee, Sang Kyu; Shin, Won Suk; Lim, Eunhee
- Issue Date
- Apr-2019
- Publisher
- WILEY-V C H VERLAG GMBH
- Keywords
- acceptors; nonfullerene; organic photovoltaic cells; organic solar cells; rhodanine
- Citation
- ADVANCED ENERGY MATERIALS, v.9, no.16, pp.1 - 11
- Indexed
- SCIE
SCOPUS
- Journal Title
- ADVANCED ENERGY MATERIALS
- Volume
- 9
- Number
- 16
- Start Page
- 1
- End Page
- 11
- URI
- https://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/14214
- DOI
- 10.1002/aenm.201804021
- ISSN
- 1614-6832
- Abstract
- The introduction of rigid and extended ladder-type fused-ring cores, such as indacenodithiophene, has enabled the synthesis of a variety of nonfullerene small molecules for use as electron acceptors in high-performance organic photovoltaic cells. Contrasting with recent trends, a very simple-structured nonfullerene acceptor (NFA), T2-ORH, consisting of a bithiophene core and octyl-substituted rhodanine ends, is synthesized in two steps from inexpensive commercially available raw materials. Its relatively short p-conjugation results in a wide bandgap and a blue-shifted UV-vis absorption profile complementary to those of poly[4,8-bis(5-(2-ethylhexyl) thiophen-2-yl) benzo[1,2-b: 4,5-b'] dithiophene-co-3-fluorothieno[3,4-b] thiophene-2-carboxylate] (PTB7-Th). Despite a sufficient offset between T2-ORH and PTB7-Th, the lowest unoccupied molecular orbital (LUMO) energy level of T2-ORH is still higher than the LUMOs of other NFAs (e.g., ITIC). Therefore, the PTB7-Th: T2-ORH blend film exhibits an efficiency of 9.33% with a high open-circuit voltage of 1.07 V and a short-circuit current of 14.72 mA cm(-2) in an additive-free single-junction cell. Importantly, the optimized device displays a remarkably low energy loss of 0.51 eV, in which bimolecular and monomolecular charge recombination is effectively suppressed by solvent vapor annealing treatment. The blend film has a very smooth and homogeneous morphology, providing both vertical and parallel charge transport in the devices.
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