Vapor-Assisted Ex-Situ Doping of Carbon Nanotube towards Efficient and Stable Perovskite Solar Cells
- Authors
- Lee, Jin-Wook; Jeon, Il; Lin, Hao-Sheng; Seo, Seungju; Han, Tae Hee; Anisimov, Anton; Kauppinen, Esko I.; Matsuo, Yutaka; Maruyama, Shigeo; Yang, Yang
- Issue Date
- Apr-2019
- Publisher
- AMER CHEMICAL SOC
- Keywords
- Perovskite; carbon nanotube; doping; stability; electrode
- Citation
- NANO LETTERS, v.19, no.4, pp.2223 - 2230
- Indexed
- SCIE
SCOPUS
- Journal Title
- NANO LETTERS
- Volume
- 19
- Number
- 4
- Start Page
- 2223
- End Page
- 2230
- URI
- https://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/14215
- DOI
- 10.1021/acs.nanolett.8b04190
- ISSN
- 1530-6984
- Abstract
- Single-walled carbon nanotubes (CNTs) has been considered as a promising material for a top electrode of perovskite solar cells owing to its hydrophobic nature, earth-abundance, and mechanical robustness. However, its poor conductivity, a shallow work function, and nonreflective nature have limited further enhancement in power conversion efficiency (PCE) of top CNT electrode-based perovskite solar cells. Here, we introduced a simple and scalable method to address these issues by utilizing an ex-situ vapor-assisted doping method. Trifluoromethane-sulfonic acid (TFMS) vapor doping of the free-standing CNT sheet enabled tuning of conductivity and work function of the CNT electrode without damaging underneath layers. The sheet resistance of the CNT sheet was decreased by 21.3% with an increase in work function from 4.75 to 4.96 eV upon doping of TFMS. In addition, recently developed 2D perovskite-protected Cs-containing formamidium lead iodide (FACsPbI(3)) technology was employed to maximize the absorption. Because of the lowered resistance, better energy alignment, and improved absorption, the CNT electrode-based PSCs produced a PCE of 17.6% with a J(SC) of 24.21 mA/cm(2), V-OC of 1.005 V, and FF of 0.72. Furthermore, the resulting TFMS-doped CNT-PSCs demonstrated higher thermal and operational stability than bare CNT and metal electrode-based devices.
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