Enhanced structural and electrical features of amorphous InGaZnO thin film transistors via a heavy Kr gas process
DC Field | Value | Language |
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dc.contributor.author | Kim, Tae Yoon | - |
dc.contributor.author | Kang, Tae Sung | - |
dc.contributor.author | Hong, Jin Pyo | - |
dc.date.accessioned | 2022-07-07T04:13:52Z | - |
dc.date.available | 2022-07-07T04:13:52Z | - |
dc.date.created | 2021-05-12 | - |
dc.date.issued | 2015-08 | - |
dc.identifier.issn | 1567-1739 | - |
dc.identifier.uri | https://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/142937 | - |
dc.description.abstract | We report the influence of a heavy Kr gas sputtering process on the electrical and structural features of amorphous indium-gallium-zinc-oxide (a-IGZO) thin film transistors (TFFs). Electrical observation revealed effective reduction of threshold voltage shifts by adapting a simple sputtering process with Kr gas during growth of a-IGZO TFTs. In addition, the application of Kr-gas resulted in a reduction of oxygen vacancies associated with defect sites in the a-IGZO active channel layer. Structural analyses including atomic force microscopy, X-ray reflectivity, Auger electron spectroscopy, and X-ray photoelectron spectroscopy depth profiling were carried out, along with electrical bias stability tests that convincingly confirm progress of heavy Kr gas process-induced features. | - |
dc.language | 영어 | - |
dc.language.iso | en | - |
dc.publisher | ELSEVIER | - |
dc.title | Enhanced structural and electrical features of amorphous InGaZnO thin film transistors via a heavy Kr gas process | - |
dc.type | Article | - |
dc.contributor.affiliatedAuthor | Hong, Jin Pyo | - |
dc.identifier.doi | 10.1016/j.cap.2015.04.004 | - |
dc.identifier.scopusid | 2-s2.0-84930274314 | - |
dc.identifier.wosid | 000356550400011 | - |
dc.identifier.bibliographicCitation | CURRENT APPLIED PHYSICS, v.15, no.8, pp.910 - 914 | - |
dc.relation.isPartOf | CURRENT APPLIED PHYSICS | - |
dc.citation.title | CURRENT APPLIED PHYSICS | - |
dc.citation.volume | 15 | - |
dc.citation.number | 8 | - |
dc.citation.startPage | 910 | - |
dc.citation.endPage | 914 | - |
dc.type.rims | ART | - |
dc.type.docType | Article | - |
dc.identifier.kciid | ART002019753 | - |
dc.description.journalClass | 1 | - |
dc.description.isOpenAccess | N | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.description.journalRegisteredClass | kci | - |
dc.relation.journalResearchArea | Materials Science | - |
dc.relation.journalResearchArea | Physics | - |
dc.relation.journalWebOfScienceCategory | Materials Science, Multidisciplinary | - |
dc.relation.journalWebOfScienceCategory | Physics, Applied | - |
dc.subject.keywordPlus | PERFORMANCE | - |
dc.subject.keywordAuthor | Oxide TFT | - |
dc.subject.keywordAuthor | IGZO | - |
dc.subject.keywordAuthor | Kr gas | - |
dc.subject.keywordAuthor | Oxygen vacancy | - |
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