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Enhancement of photoluminescence efficiency from semi-polar InGaN/GaN multiple quantum wells with silver metal
- Authors
- Lee, Kyoung Su; Lee, Dong Uk; Kim, Eun Kyu
- Issue Date
- Jun-2015
- Publisher
- Elsevier BV
- Keywords
- Semi-polar GaN; InGaN/GaN light emitting diode; Multi-quantum wells; Surface plasmon polariton; Localized surface plasmon
- Citation
- Journal of Luminescence, v.162, pp 115 - 118
- Pages
- 4
- Indexed
- SCIE
SCOPUS
- Journal Title
- Journal of Luminescence
- Volume
- 162
- Start Page
- 115
- End Page
- 118
- ISSN
- 0022-2313
1872-7883
- Abstract
- We have studied the effect of surface plasmon polariton (SPP) and localized surface plasmon (LSP) on the emission of semi-polar InGaN/GaN light emitting diode (LED) with multi-quantum wells structure. From the photoluminescence (PL) measurement at room temperature, spectrally-integrated enhancements of semi-polar SPP LEDs with 15 and 40-nm-thick Ag films were 1.7 and 2.9, respectively. The absorbance peak of Ag nanoparticles was red-shifted as diameter of Ag nanoparticles increases. However, the absorbance peak of Au nanoparticles was not related with their diameters. Spectrally-integrated enhancement of semi-polar LSP LED with 250-nm-diameter Ag nanoparticles was shown to 1.3. These results showed that the blue emission of semi-polar InGaN/GaN LED can be improved by SPP and LSP.
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