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Properties of room-temperature ferromagnetic semiconductor in manganese-doped bilayer graphene by chemical vapor deposition
- Authors
- Park, Chang-Soo; Zhao, Yu; Shon, Yoon; Yoon, Im Taek; Lee, Cheol Jin; Song, Jin Dong; Lee, Haigun; Kim, Eun Kyu
- Issue Date
- May-2015
- Publisher
- Royal Society of Chemistry
- Citation
- Journal of Materials Chemistry C, v.3, no.17, pp 4235 - 4238
- Pages
- 4
- Indexed
- SCIE
SCOPUS
- Journal Title
- Journal of Materials Chemistry C
- Volume
- 3
- Number
- 17
- Start Page
- 4235
- End Page
- 4238
- ISSN
- 2050-7526
2050-7534
- Abstract
- We report a ferromagnetic graphene field-effect transistor with a band gap. The Mn-doped graphene has a coercive field (H-c) of 188 Oe and a remanent magnetization of 102 emu cm(-3) at 10 K. The temperature-dependent conductivity indicates that the Mn-doped graphene has a band gap of 165 meV. A fabricated graphene FET revealed p-type semiconducting behavior, and the field effect mobility was determined to be approximately 2543 cm(2) V-1 s(-1) at room temperature.
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