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Growth Mechanism of Graphene on Graphene Films Grown by Chemical Vapor Deposition

Authors
Kang, CheongJung, Da HeeLee, Jin Seok
Issue Date
Mar-2015
Publisher
WILEY-V C H VERLAG GMBH
Keywords
Cu grain size; domain density; graphene; growth mechanism; heating ramp rate
Citation
CHEMISTRY-AN ASIAN JOURNAL, v.10, no.3, pp.637 - 641
Indexed
SCIE
SCOPUS
Journal Title
CHEMISTRY-AN ASIAN JOURNAL
Volume
10
Number
3
Start Page
637
End Page
641
URI
https://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/143230
DOI
10.1002/asia.201403395
ISSN
1861-4728
Abstract
We report an approach for the synthesis of monoor bilayer graphene films by atmospheric-pressure chemical vapor deposition that can achieve a low defect density through control over the growth time. Different heating ramp rates were found to lead to variation in the smoothness and grain size of the Cu foil substrate, which directly influenced the density of the graphene domains. The rough Cu surface induced by rapid heating creates a high density of graphene domains in the initial stage, ultimately resulting in a graphene film with a high defect density due to an increased overlap between domains. Conversely, a slow heating rate resulted in a smooth and flat Cu surface, thereby lowering the density of the initial graphene domains and ensuring a uniform monolayer film. From this, we demonstrate that the growth mechanism of graphene on existing graphene films is dependent on the density of the initial graphene domains, which is affected by the heating ramp rate.
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