Resistance switching mode transformation in SrRuO3/Cr-doped SrZrO3/Pt frameworks via a thermally activated Ti out-diffusion process
DC Field | Value | Language |
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dc.contributor.author | Jo, Yongcheol | - |
dc.contributor.author | Jung, Kyooho | - |
dc.contributor.author | Kim, Jongmin | - |
dc.contributor.author | Woo, Hyeonseok | - |
dc.contributor.author | Han, Jaeseok | - |
dc.contributor.author | Kim, Hyungsang | - |
dc.contributor.author | Hong, Jinpyo | - |
dc.contributor.author | Lee, Jeon-Kook | - |
dc.contributor.author | Im, Hyunsik | - |
dc.date.accessioned | 2022-07-07T04:55:59Z | - |
dc.date.available | 2022-07-07T04:55:59Z | - |
dc.date.created | 2021-05-12 | - |
dc.date.issued | 2014-12 | - |
dc.identifier.issn | 2045-2322 | - |
dc.identifier.uri | https://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/143282 | - |
dc.description.abstract | This work reports on a mechanism for irreversible resistive switching (RS) transformation from bipolar to unipolar RS behavior in SrRuO3 (SRO)/Cr-doped SrZrO3 (SZO:Cr)/Pt capacitor structures prepared on a Ti/SiO2/Si substrate. Counter-clockwise bipolar RS memory current-voltage (I-V) characteristics are observed within the RS voltage window of -2.5 to +1.9 V, with good endurance and retention properties. As the bias voltage increases further beyond 4 V under a forward bias, a forming process occurs resulting in irreversible RS mode transformation from bipolar to unipolar mode. This switching mode transformation is a direct consequence of thermally activated Ti out-diffusion from a Ti adhesion layer. Transition metal Ti effectively out-diffuses through the loose Pt electrode layer at high substrate temperatures, leading to the unintended formation of a thin titanium oxide (TiOx where x < 2) layer between the Pt electrode and the SZO:Cr layer as well as additional Ti atoms in the SZO:Cr layer. Cross-sectional scanning electron microscopy, transmission electron microscopy and Auger electron spectroscopy depth-profile measurements provided apparent evidence of the Ti out-diffusion phenomenon. We propose that the out-diffusion-induced additional Ti atoms in the SZO:Cr layer contributes to the creation of the metallic filamentary channels. | - |
dc.language | 영어 | - |
dc.language.iso | en | - |
dc.publisher | NATURE PUBLISHING GROUP | - |
dc.title | Resistance switching mode transformation in SrRuO3/Cr-doped SrZrO3/Pt frameworks via a thermally activated Ti out-diffusion process | - |
dc.type | Article | - |
dc.contributor.affiliatedAuthor | Hong, Jinpyo | - |
dc.identifier.doi | 10.1038/srep07354 | - |
dc.identifier.scopusid | 2-s2.0-84923233657 | - |
dc.identifier.wosid | 000346273700002 | - |
dc.identifier.bibliographicCitation | SCIENTIFIC REPORTS, v.4, pp.1 - 7 | - |
dc.relation.isPartOf | SCIENTIFIC REPORTS | - |
dc.citation.title | SCIENTIFIC REPORTS | - |
dc.citation.volume | 4 | - |
dc.citation.startPage | 1 | - |
dc.citation.endPage | 7 | - |
dc.type.rims | ART | - |
dc.type.docType | Article | - |
dc.description.journalClass | 1 | - |
dc.description.isOpenAccess | Y | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Science & Technology - Other Topics | - |
dc.relation.journalWebOfScienceCategory | Multidisciplinary Sciences | - |
dc.subject.keywordPlus | THIN-FILMS | - |
dc.subject.keywordPlus | OXIDE-FILMS | - |
dc.subject.keywordPlus | MEMORY | - |
dc.subject.keywordPlus | ELECTRODES | - |
dc.subject.keywordPlus | EVOLUTION | - |
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