Stabilization and Manipulation of Electronically Phase-Separated Ground States in Defective Indium Atom Wires on Silicon
- Authors
- Zhang, Hui; Ming, Fangfei; Kim, Hyun-Jung; Zhu, Hongbin; Zhang, Qiang; Weitering, Hanno H.; Xiao, Xudong; Zeng, Changgan; Cho, Jun Hyung; Zhang, Zhenyu
- Issue Date
- Nov-2014
- Publisher
- AMER PHYSICAL SOC
- Citation
- PHYSICAL REVIEW LETTERS, v.113, no.19, pp.1 - 5
- Indexed
- SCIE
SCOPUS
- Journal Title
- PHYSICAL REVIEW LETTERS
- Volume
- 113
- Number
- 19
- Start Page
- 1
- End Page
- 5
- URI
- https://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/143299
- DOI
- 10.1103/PhysRevLett.113.196802
- ISSN
- 0031-9007
- Abstract
- Exploration and manipulation of electronic states in low-dimensional systems are of great importance in the fundamental and practical aspects of nanomaterial and nanotechnology. Here, we demonstrate that the incorporation of vacancy defects into monatomic indium wires on n-type Si(111) can stabilize electronically phase-separated ground states where the insulating 8 x 2 and metallic 4 x 1 phases coexist. Furthermore, the areal ratio of the two phases in the phase-separated states can be tuned reversibly by electric field or charge doping, and such tunabilities can be quantitatively captured by first principles-based modeling and simulations. The present results extend the realm of electronic phase separation from strongly correlated d-electron materials typically in bulk form to weakly interacting sp-electron systems in reduced dimensionality.
- Files in This Item
- There are no files associated with this item.
- Appears in
Collections - 서울 자연과학대학 > 서울 물리학과 > 1. Journal Articles
![qrcode](https://api.qrserver.com/v1/create-qr-code/?size=55x55&data=https://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/143299)
Items in ScholarWorks are protected by copyright, with all rights reserved, unless otherwise indicated.