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Emission Enhancement of InGaN/GaN Light Emitting Diode by Using Ag Nanoparticles
- Authors
- Lee, Kyoung Su; Kim, Seon Pil; Lee, Dong Uk; Kim, Eun Kyu
- Issue Date
- Oct-2014
- Publisher
- AMER SCIENTIFIC PUBLISHERS
- Keywords
- InGaN/GaN; Light Emitting Diode; Surface Plasmon; Ag Nanoparticles
- Citation
- JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY, v.14, no.10, pp.7830 - 7834
- Indexed
- SCIE
SCOPUS
- Journal Title
- JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY
- Volume
- 14
- Number
- 10
- Start Page
- 7830
- End Page
- 7834
- ISSN
- 1533-4880
- Abstract
- We have studied the effect of surface plasmon (SP) coupling to enhance emission efficiency of light emitting diode (LED) with multiple quantum wells (MQWs) structure by positioning Ag nanoparticles on the line-arrayed patterns. The line-arrayed patterns were fabricated by photolithography and inductively coupled plasma reactive ion etching process. The Ag nanoparticles were formed by thermal annealing at 300 degrees C and 400 degrees C for 30 min for Ag films with thickness of 10 nm and 15 nm deposited on the patterned LED structures, respectively. The photoluminescence (PL) emission intensity of line-patterned LED with Ag nanoparticles was overall enhanced. According to the spectra of time resolved PL, carrier life times of line-patterned LED with and without Ag nanoparticles appeared about 0.47 and 5.47 ns, respectively.
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