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Thermally stable perpendicular magnetic anisotropy features of Ta/TaOx/Ta/CoFeB/MgO/W stacks via TaOx underlayer insertion

Authors
Yang, SeungMoLee, JaBinAn, GwangGukKim, JaeHongChung, WooSeongHong, JinPyo
Issue Date
Sep-2014
Publisher
American Institute of Physics
Citation
Journal of Applied Physics, v.116, no.11, pp 1 - 6
Pages
6
Indexed
SCIE
SCOPUS
Journal Title
Journal of Applied Physics
Volume
116
Number
11
Start Page
1
End Page
6
URI
https://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/143328
DOI
10.1063/1.4895709
ISSN
0021-8979
1089-7550
Abstract
We report that a TaOx underlayer enhances the stability of perpendicular magnetic anisotropy (PMA) in TaOx/Ta/CoFeB/MgO stacks during annealing; control of oxygen content in the TaOx layer is critical. X-ray photoelectron spectroscopy observations revealed clear suppression of Ta atom diffusion towards the CoFeB/MgO interface or MgO regions. The TaOx underlayer possibly served as a diffusion sponge, permitting some thermally activated Ta atoms to impregnate the TaOx underlayer via a diffusion path, such as grain boundaries. We propose a possible mechanism for enhanced PMA stability based on diffusion of thermally activated Ta atoms.
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