Antiferromagnetic superexchange mediated by a resonant surface state in Sn/Si(111)
DC Field | Value | Language |
---|---|---|
dc.contributor.author | Lee, Jun-Ho | - |
dc.contributor.author | Ren, Xiao-Yan | - |
dc.contributor.author | Jia, Yu | - |
dc.contributor.author | Cho, Jun-Hyung | - |
dc.date.accessioned | 2022-07-07T05:24:34Z | - |
dc.date.available | 2022-07-07T05:24:34Z | - |
dc.date.created | 2021-05-12 | - |
dc.date.issued | 2014-09 | - |
dc.identifier.issn | 1098-0121 | - |
dc.identifier.uri | https://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/143329 | - |
dc.description.abstract | The Sn overlayer on the Si(111) surface has been considered as a prototypical system for exploring two-dimensional (2D) correlated physics on the triangular lattice. Most of the previous theoretical studies were based on the presumption that the surface state dominantly originates from Sn dangling-bond (DB) electrons, leading to a strongly correlated 2D electronic system. By contrast, our density-functional theory calculations show that the Sn DB state significantly hybridizes with Si substrate states to form a resonant state. The strong resonance between the Sn 5p(z) and Si 3p(z) orbitals facilitates the recently observed antiferromagnetic order through superexchange interactions, giving rise to a band-gap opening. It is thus demonstrated that the insulating ground state of Sn/Si(111) can be characterized as a Slater-type insulator via band magnetism. | - |
dc.language | 영어 | - |
dc.language.iso | en | - |
dc.publisher | AMER PHYSICAL SOC | - |
dc.title | Antiferromagnetic superexchange mediated by a resonant surface state in Sn/Si(111) | - |
dc.type | Article | - |
dc.contributor.affiliatedAuthor | Cho, Jun-Hyung | - |
dc.identifier.doi | 10.1103/PhysRevB.90.125439 | - |
dc.identifier.scopusid | 2-s2.0-84907459102 | - |
dc.identifier.wosid | 000344016400018 | - |
dc.identifier.bibliographicCitation | PHYSICAL REVIEW B, v.90, no.12, pp.1 - 5 | - |
dc.relation.isPartOf | PHYSICAL REVIEW B | - |
dc.citation.title | PHYSICAL REVIEW B | - |
dc.citation.volume | 90 | - |
dc.citation.number | 12 | - |
dc.citation.startPage | 1 | - |
dc.citation.endPage | 5 | - |
dc.type.rims | ART | - |
dc.type.docType | Article | - |
dc.description.journalClass | 1 | - |
dc.description.isOpenAccess | N | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Materials Science | - |
dc.relation.journalResearchArea | Physics | - |
dc.relation.journalWebOfScienceCategory | Materials Science, Multidisciplinary | - |
dc.relation.journalWebOfScienceCategory | Physics, Applied | - |
dc.relation.journalWebOfScienceCategory | Physics, Condensed Matter | - |
dc.subject.keywordPlus | CHARGE-DENSITY-WAVE | - |
dc.subject.keywordPlus | QUANTUM SPIN LIQUID | - |
dc.subject.keywordPlus | ELECTRON CORRELATION | - |
dc.subject.keywordPlus | SUPERCONDUCTIVITY | - |
dc.subject.keywordPlus | ROOT-3R30-DEGREES | - |
dc.subject.keywordPlus | SEMICONDUCTORS | - |
Items in ScholarWorks are protected by copyright, with all rights reserved, unless otherwise indicated.
222, Wangsimni-ro, Seongdong-gu, Seoul, 04763, Korea+82-2-2220-1365
COPYRIGHT © 2021 HANYANG UNIVERSITY.
Certain data included herein are derived from the © Web of Science of Clarivate Analytics. All rights reserved.
You may not copy or re-distribute this material in whole or in part without the prior written consent of Clarivate Analytics.