Antiferromagnetic superexchange mediated by a resonant surface state in Sn/Si(111)
- Authors
- Lee, Jun-Ho; Ren, Xiao-Yan; Jia, Yu; Cho, Jun-Hyung
- Issue Date
- Sep-2014
- Publisher
- AMER PHYSICAL SOC
- Citation
- PHYSICAL REVIEW B, v.90, no.12, pp.1 - 5
- Indexed
- SCIE
SCOPUS
- Journal Title
- PHYSICAL REVIEW B
- Volume
- 90
- Number
- 12
- Start Page
- 1
- End Page
- 5
- URI
- https://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/143329
- DOI
- 10.1103/PhysRevB.90.125439
- ISSN
- 1098-0121
- Abstract
- The Sn overlayer on the Si(111) surface has been considered as a prototypical system for exploring two-dimensional (2D) correlated physics on the triangular lattice. Most of the previous theoretical studies were based on the presumption that the surface state dominantly originates from Sn dangling-bond (DB) electrons, leading to a strongly correlated 2D electronic system. By contrast, our density-functional theory calculations show that the Sn DB state significantly hybridizes with Si substrate states to form a resonant state. The strong resonance between the Sn 5p(z) and Si 3p(z) orbitals facilitates the recently observed antiferromagnetic order through superexchange interactions, giving rise to a band-gap opening. It is thus demonstrated that the insulating ground state of Sn/Si(111) can be characterized as a Slater-type insulator via band magnetism.
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