Phase-controlled SnO2 and SnO growth by atomic layer deposition using Bis (N-ethoxy-2,2-dimethyl propanamido)tin precursor
DC Field | Value | Language |
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dc.contributor.author | Kim, Hyo Yeon | - |
dc.contributor.author | Nam, Ji Hyeun | - |
dc.contributor.author | George, Sheby Mary | - |
dc.contributor.author | Park, Jin-Seong | - |
dc.contributor.author | Park, Bo Keun | - |
dc.contributor.author | Kim, Gun Hwan | - |
dc.contributor.author | Jeon, Dong Ju | - |
dc.contributor.author | Chung, Taek-Mo | - |
dc.contributor.author | Han, Jeong Hwan | - |
dc.date.accessioned | 2021-08-02T11:54:56Z | - |
dc.date.available | 2021-08-02T11:54:56Z | - |
dc.date.created | 2021-05-12 | - |
dc.date.issued | 2019-03 | - |
dc.identifier.issn | 0272-8842 | - |
dc.identifier.uri | https://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/14355 | - |
dc.description.abstract | Atomic layer deposition (ALD) of SnO and SnO2 thin films was successfully demonstrated over a wide temperature range of 70300 degrees C using a divalent Sn-precursor, bis(N-ethoxy-2,2-dimethyl propanamido)tin (Sn(edpa)(2)). The regulated growth of the SnO2 and SnO films was realized by employing O-2-plasma and H2O, respectively. Pure SnO2 and SnO films were deposited with negligible C and N contents at all the growth temperatures, and the films exhibited polycrystalline and amorphous structures, respectively. The SnO2 films presented a high transmittance of > 85% in the wavelength range of 400-700 nm and an indirect band gap of 3.6-4.0 eV; meanwhile, the SnO films exhibited a lower transmittance of > 60% and an indirect band gap of 2.9-3.0 eV. The SnO2 films exhibited n-type semiconducting characteristics with carrier concentrations of 8.5 x 10(16)-1.2 x 10(20) cm(-3) and Hall mobilities of 2-26 cm(2)/V s. By employing an alternate ALD growth of SnO and SnO2 films, SnO2/SnO multilayer structures were successfully fabricated at 120 degrees C. The in-situ quadrupole mass spectrometry analysis performed during ALD revealed that the oxidation of chemisorbed Sn-precursor occurs dominantly during the Sn(edpa)(2)/O-2-plasma ALD process, resulting in the production of combustion by-products, whereas the Sn(edpa)(2)/H2O ALD process was governed by a ligand exchange reaction with the maintenance of the original oxidation state of Sn2+. | - |
dc.language | 영어 | - |
dc.language.iso | en | - |
dc.publisher | ELSEVIER SCI LTD | - |
dc.title | Phase-controlled SnO2 and SnO growth by atomic layer deposition using Bis (N-ethoxy-2,2-dimethyl propanamido)tin precursor | - |
dc.type | Article | - |
dc.contributor.affiliatedAuthor | Park, Jin-Seong | - |
dc.identifier.doi | 10.1016/j.ceramint.2018.09.263 | - |
dc.identifier.scopusid | 2-s2.0-85058003847 | - |
dc.identifier.wosid | 000458228200121 | - |
dc.identifier.bibliographicCitation | CERAMICS INTERNATIONAL, v.45, no.4, pp.5124 - 5132 | - |
dc.relation.isPartOf | CERAMICS INTERNATIONAL | - |
dc.citation.title | CERAMICS INTERNATIONAL | - |
dc.citation.volume | 45 | - |
dc.citation.number | 4 | - |
dc.citation.startPage | 5124 | - |
dc.citation.endPage | 5132 | - |
dc.type.rims | ART | - |
dc.type.docType | Article | - |
dc.description.journalClass | 1 | - |
dc.description.isOpenAccess | N | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Materials Science | - |
dc.relation.journalWebOfScienceCategory | Materials Science, Ceramics | - |
dc.subject.keywordPlus | THIN-FILM TRANSISTORS | - |
dc.subject.keywordPlus | TIN OXIDE | - |
dc.subject.keywordPlus | PERFORMANCE | - |
dc.subject.keywordPlus | MONOXIDE | - |
dc.subject.keywordPlus | FABRICATION | - |
dc.subject.keywordPlus | OXIDATION | - |
dc.subject.keywordPlus | DEVICES | - |
dc.subject.keywordPlus | SENSOR | - |
dc.subject.keywordAuthor | SnO2 | - |
dc.subject.keywordAuthor | SnO | - |
dc.subject.keywordAuthor | Atomic layer deposition | - |
dc.subject.keywordAuthor | Bis(N-ethoxy-2 2-dimethyl propanamido)tin | - |
dc.subject.keywordAuthor | Quadrupole mass spectrometer | - |
dc.identifier.url | https://linkinghub.elsevier.com/retrieve/pii/S0272884218327457 | - |
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