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Influence of oxygen ion drift on a negative difference behavior in a reset process of bipolar resistive switching
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| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | Bae, Yoon Cheol | - |
| dc.contributor.author | Lee, Ah Rahm | - |
| dc.contributor.author | Baek, Gwang Ho | - |
| dc.contributor.author | Chung, Je Bock | - |
| dc.contributor.author | Kim, Tae Yoon | - |
| dc.contributor.author | Im, Hyun Sik | - |
| dc.contributor.author | Hong, Jin Pyo | - |
| dc.date.accessioned | 2022-07-07T05:59:12Z | - |
| dc.date.available | 2022-07-07T05:59:12Z | - |
| dc.date.created | 2021-05-12 | - |
| dc.date.issued | 2014-03 | - |
| dc.identifier.issn | 1567-1739 | - |
| dc.identifier.uri | https://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/143609 | - |
| dc.description.abstract | We present the oxygen ion drift-based resistive switching features of TiOx/TiOy bi-layer homo-junctions. The TiOx layer in this bi-layer configuration was designed to have a stoichiometric chemical composition of TiO2, while the TiOy layer was designed to have a non-stoichiometric chemical composition. X-ray photoelectron spectroscopy measurements were carried out before and after electro-forming to determine the role of non-lattice oxygen content. Variation of the oxygen ion content in the TiO2 layers resulted in changes in the on/off ratio and increased the non-lattice oxygen content. A possible switching mechanism based on oxygen ion content is discussed. | - |
| dc.language | 영어 | - |
| dc.language.iso | en | - |
| dc.publisher | ELSEVIER | - |
| dc.title | Influence of oxygen ion drift on a negative difference behavior in a reset process of bipolar resistive switching | - |
| dc.type | Article | - |
| dc.contributor.affiliatedAuthor | Hong, Jin Pyo | - |
| dc.identifier.doi | 10.1016/j.cap.2013.11.029 | - |
| dc.identifier.scopusid | 2-s2.0-84892158613 | - |
| dc.identifier.wosid | 000331640600025 | - |
| dc.identifier.bibliographicCitation | CURRENT APPLIED PHYSICS, v.14, no.3, pp.355 - 358 | - |
| dc.relation.isPartOf | CURRENT APPLIED PHYSICS | - |
| dc.citation.title | CURRENT APPLIED PHYSICS | - |
| dc.citation.volume | 14 | - |
| dc.citation.number | 3 | - |
| dc.citation.startPage | 355 | - |
| dc.citation.endPage | 358 | - |
| dc.type.rims | ART | - |
| dc.type.docType | Article | - |
| dc.identifier.kciid | ART001867959 | - |
| dc.description.journalClass | 1 | - |
| dc.description.isOpenAccess | N | - |
| dc.description.journalRegisteredClass | scie | - |
| dc.description.journalRegisteredClass | scopus | - |
| dc.description.journalRegisteredClass | kci | - |
| dc.relation.journalResearchArea | Materials Science | - |
| dc.relation.journalResearchArea | Physics | - |
| dc.relation.journalWebOfScienceCategory | Materials Science, Multidisciplinary | - |
| dc.relation.journalWebOfScienceCategory | Physics, Applied | - |
| dc.subject.keywordPlus | MEMORY | - |
| dc.subject.keywordAuthor | XPS | - |
| dc.subject.keywordAuthor | Resistive switching | - |
| dc.subject.keywordAuthor | Non-lattice oxygen | - |
| dc.subject.keywordAuthor | ReRAM | - |
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Related Researcher
- Hong, Jin Pyo
- COLLEGE OF NATURAL SCIENCES (DEPARTMENT OF PHYSICS)