Improved performance and stability of In-Sn-Zn-O thin film transistor by introducing a meso-crystalline ZrO2 high-k gate insulator
DC Field | Value | Language |
---|---|---|
dc.contributor.author | Choi, Wan-Ho | - |
dc.contributor.author | Sheng, Jiazhen | - |
dc.contributor.author | Jeong, Hyun-Jun | - |
dc.contributor.author | Park, Jin-Seong | - |
dc.contributor.author | Kim, MinJung | - |
dc.contributor.author | Jeon, Woojin | - |
dc.date.accessioned | 2021-08-02T11:55:02Z | - |
dc.date.available | 2021-08-02T11:55:02Z | - |
dc.date.created | 2021-05-12 | - |
dc.date.issued | 2019-03 | - |
dc.identifier.issn | 0734-2101 | - |
dc.identifier.uri | https://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/14360 | - |
dc.description.abstract | Electrical characteristics and reliability of an In-Sn-Zn-O (ITZO) thin film transistor (TFT) using ZrO2 as a high-k gate insulator were investigated. Varying the atomic layer deposition process temperature caused differences in the ZrO2 thin film chemical state and microstructure. Corresponding changes in the electrical properties of the thin film were evaluated. While the ZrO2 thin film deposited at 300 degrees C exhibited an excellent thin film property, the best TFT performance as measured by subthreshold swing, effective mobility, and on/off ratio was achieved with deposition at 250 degrees C. The formation of meso-crystalline structure and subsequent low leakage current density enhanced the TFT performance along with the suppression of Coulombic scattering and interface defect formation. Moreover, the reliability of the TFT was demonstrated using both positive and negative bias temperature stress measurements. | - |
dc.language | 영어 | - |
dc.language.iso | en | - |
dc.publisher | A V S AMER INST PHYSICS | - |
dc.title | Improved performance and stability of In-Sn-Zn-O thin film transistor by introducing a meso-crystalline ZrO2 high-k gate insulator | - |
dc.type | Article | - |
dc.contributor.affiliatedAuthor | Park, Jin-Seong | - |
dc.identifier.doi | 10.1116/1.5079834 | - |
dc.identifier.scopusid | 2-s2.0-85061755810 | - |
dc.identifier.wosid | 000460437200028 | - |
dc.identifier.bibliographicCitation | JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A, v.37, no.2, pp.1 - 10 | - |
dc.relation.isPartOf | JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A | - |
dc.citation.title | JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A | - |
dc.citation.volume | 37 | - |
dc.citation.number | 2 | - |
dc.citation.startPage | 1 | - |
dc.citation.endPage | 10 | - |
dc.type.rims | ART | - |
dc.type.docType | Article | - |
dc.description.journalClass | 1 | - |
dc.description.isOpenAccess | N | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Materials Science | - |
dc.relation.journalResearchArea | Physics | - |
dc.relation.journalWebOfScienceCategory | Materials Science, Coatings & Films | - |
dc.relation.journalWebOfScienceCategory | Physics, Applied | - |
dc.subject.keywordPlus | ATOMIC LAYER DEPOSITION | - |
dc.subject.keywordPlus | ELECTRICAL-PROPERTIES | - |
dc.subject.keywordPlus | OPTICAL-PROPERTIES | - |
dc.subject.keywordPlus | LOW-VOLTAGE | - |
dc.subject.keywordPlus | OXIDE | - |
dc.subject.keywordPlus | DIELECTRICS | - |
dc.subject.keywordPlus | MOBILITY | - |
dc.subject.keywordPlus | HFO2 | - |
dc.subject.keywordPlus | ENHANCEMENT | - |
dc.subject.keywordPlus | CAPACITORS | - |
dc.identifier.url | https://pubs.aip.org/avs/jva/article/37/2/020924/247176/Improved-performance-and-stability-of-In-Sn-Zn-O | - |
Items in ScholarWorks are protected by copyright, with all rights reserved, unless otherwise indicated.
222, Wangsimni-ro, Seongdong-gu, Seoul, 04763, Korea+82-2-2220-1365
COPYRIGHT © 2021 HANYANG UNIVERSITY.
Certain data included herein are derived from the © Web of Science of Clarivate Analytics. All rights reserved.
You may not copy or re-distribute this material in whole or in part without the prior written consent of Clarivate Analytics.