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Oxygen incorporation in ZnTe thin films grown by plasma-assisted pulsed laser deposition
- Authors
- Pak, Sang Woo; Lee, Dong Uk; Kim, Eun Kyu
- Issue Date
- Mar-2014
- Publisher
- The Korean Physical Society
- Keywords
- Intermediate energy band; ZnTe; Oxygen incorporation; Pulsed laser deposition
- Citation
- Current Applied Physics, v.14, pp S49 - S52
- Indexed
- SCIE
SCOPUS
- Journal Title
- Current Applied Physics
- Volume
- 14
- Start Page
- S49
- End Page
- S52
- ISSN
- 1567-1739
1878-1675
- Abstract
- We studied oxygen incorporation into ZnTe thin films with nitrogen and oxygen plasma during a plasma-assisted pulsed laser deposition (PA-PLD). It was shown that ZnTe:O layer formed with oxygen plasma exhibits an enhancement of optical transparency in visible spectral region due to the formation of amorphous TeOx. Especially, the ZnTe:NO deposited by PA-PLD under nitrogen and oxygen partial pressures with N-2:O-2 of 10:3 sccm showed p-type semiconducting characteristics and the formation of intermediate band at about 0.5-0.8 eV below the ZnTe band edge. These results for oxygen incorporation in ZnTe thin film such as the enhancement of optical transparency in visible spectral region and the intermediate band formation will be useful for optoelectronic devices or intermediate band solar cells.
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