Scanning transmission X-ray microscopy probe for in situ mechanism study of graphene-oxide-based resistive random access memory
- Authors
- Nho, Hyun Woo; Kim, Jong Yun; Wang, Jian; Shin, Hyun-Joon; Choi, Sung-Yool; Yoon, Tae Hyun
- Issue Date
- Jan-2014
- Publisher
- INT UNION CRYSTALLOGRAPHY
- Keywords
- in situ; scanning transmission X-ray microscopy; STXM; graphene oxide; GO-RRAM; bipolar resistive switching mechanism; oxygen ion drift model
- Citation
- JOURNAL OF SYNCHROTRON RADIATION, v.21, pp.170 - 176
- Indexed
- SCIE
SCOPUS
- Journal Title
- JOURNAL OF SYNCHROTRON RADIATION
- Volume
- 21
- Start Page
- 170
- End Page
- 176
- URI
- https://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/143636
- DOI
- 10.1107/S1600577513026696
- ISSN
- 0909-0495
- Abstract
- Here, an in situ probe for scanning transmission X-ray microscopy (STXM) has been developed and applied to the study of the bipolar resistive switching (BRS) mechanism in an Al/graphene oxide (GO)/Al resistive random access memory (RRAM) device. To perform in situ STXM studies at the C K-and O K-edges, both the RRAM junctions and the I-0 junction were fabricated on a single Si3N4 membrane to obtain local XANES spectra at these absorption edges with more delicate I-0 normalization. Using this probe combined with the synchrotron-based STXM technique, it was possible to observe unique chemical changes involved in the BRS process of the Al/GO/Al RRAM device. Reversible oxidation and reduction of GO induced by the externally applied bias voltages were observed at the O K-edge XANES feature located at 538.2 eV, which strongly supported the oxygen ion drift model that was recently proposed from ex situ transmission electron microscope studies.
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