Paper no P35: Improved stability of solution-processed ZnO thin-film transistor post-treated by ultraviolet annealing step
DC Field | Value | Language |
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dc.contributor.author | Kang, Taesung | - |
dc.contributor.author | Koo, Jayhyun | - |
dc.contributor.author | Kim, Taeyoon | - |
dc.contributor.author | Hong, Jinpyo | - |
dc.date.accessioned | 2022-07-07T06:11:55Z | - |
dc.date.available | 2022-07-07T06:11:55Z | - |
dc.date.created | 2021-05-13 | - |
dc.date.issued | 2013-11 | - |
dc.identifier.issn | 0097-966X | - |
dc.identifier.uri | https://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/143654 | - |
dc.description.abstract | We present electrical and structural features of solution- processed ZnO thin-film transistors (TFTs) grown via a chemical solution process post-treated by ultra violet (UV) annealing step at processing temperature below 250° C. The transfer curves for the UV annealed ZnO TFTs, including around two-order higher on-current magnitude reveals only a negative drift of -0.66 V in time for 15 days, compared with a -9.29 V negative drift of the conventionally thermally annealed ZnO TFTs at 300°C. The observation of X-ray photoelectron spectroscopy clearly demonstrates the significant reduction of non-lattice oxygen vacancies via proper UV annealing step. The nature of improved stability in the UV-annealed ZnO TFTs is also described. | - |
dc.language | 영어 | - |
dc.language.iso | en | - |
dc.publisher | Blackwell Publishing Ltd | - |
dc.title | Paper no P35: Improved stability of solution-processed ZnO thin-film transistor post-treated by ultraviolet annealing step | - |
dc.type | Article | - |
dc.contributor.affiliatedAuthor | Hong, Jinpyo | - |
dc.identifier.doi | 10.1002/sdtp.4 | - |
dc.identifier.scopusid | 2-s2.0-85025123489 | - |
dc.identifier.bibliographicCitation | Digest of Technical Papers - SID International Symposium, v.44, pp.119 - 122 | - |
dc.relation.isPartOf | Digest of Technical Papers - SID International Symposium | - |
dc.citation.title | Digest of Technical Papers - SID International Symposium | - |
dc.citation.volume | 44 | - |
dc.citation.startPage | 119 | - |
dc.citation.endPage | 122 | - |
dc.type.rims | ART | - |
dc.type.docType | Conference Paper | - |
dc.description.journalClass | 1 | - |
dc.description.isOpenAccess | N | - |
dc.description.journalRegisteredClass | scopus | - |
dc.subject.keywordPlus | Annealing | - |
dc.subject.keywordPlus | Oxygen vacancies | - |
dc.subject.keywordPlus | Processing | - |
dc.subject.keywordPlus | Semiconducting organic compounds | - |
dc.subject.keywordPlus | Thin film circuits | - |
dc.subject.keywordPlus | X ray photoelectron spectroscopy | - |
dc.subject.keywordPlus | Zinc oxide | - |
dc.subject.keywordPlus | Chemical solutions | - |
dc.subject.keywordPlus | Lattice oxygen vacancies | - |
dc.subject.keywordPlus | Processing temperature | - |
dc.subject.keywordPlus | Solution-processed | - |
dc.subject.keywordPlus | Stability of solutions | - |
dc.subject.keywordPlus | Structural feature | - |
dc.subject.keywordPlus | Transfer curves | - |
dc.subject.keywordPlus | Ultraviolet annealing | - |
dc.subject.keywordPlus | Thin film transistors | - |
dc.identifier.url | https://sid.onlinelibrary.wiley.com/doi/10.1002/sdtp.4 | - |
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