Photoresponse of n-ZnO/p-Si photodiodes to violet-green bandwidth light caused by defect states
- Authors
- Cho, Seong Gook; Lee, Dong Uk; Kim, Eun Kyu
- Issue Date
- Oct-2013
- Publisher
- ELSEVIER SCIENCE SA
- Keywords
- Sputtering; Zinc oxide; Heterojunctions; Photodiodes
- Citation
- THIN SOLID FILMS, v.545, pp.517 - 520
- Indexed
- SCIE
SCOPUS
- Journal Title
- THIN SOLID FILMS
- Volume
- 545
- Start Page
- 517
- End Page
- 520
- URI
- https://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/143677
- DOI
- 10.1016/j.tsf.2013.07.068
- ISSN
- 0040-6090
- Abstract
- We fabricated n-ZnO/p-Si photodiodes by ultra-high vacuum sputtering that were highly responsive to violet-green light illumination at low operating voltages. Under illumination with light at 420 nm, the maximum photoresponsivity of the photodiodes was about 0.55 A/W at -8 V. As the ZnO film thickness increased from 150 nm to 500 nm, the photoresponsivity of the diodes to the wavelength range of 370-560 nm increased markedly, while the absorption bandwidth decreased. In particular, a slow photo-response was observed under light between the wavelengths of 540-560 nm. We speculate that the high photoresponsivity and slow photoresponse of the synthesized diodes are due to shallow and deep acceptor states originating from zinc vacancy defects in the ZnO thin film, respectively.
- Files in This Item
-
Go to Link
- Appears in
Collections - 서울 자연과학대학 > 서울 물리학과 > 1. Journal Articles
![qrcode](https://api.qrserver.com/v1/create-qr-code/?size=55x55&data=https://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/143677)
Items in ScholarWorks are protected by copyright, with all rights reserved, unless otherwise indicated.