Electrical characterization of flash memory structure with vanadium silicide nano-particles
- Authors
- Kim, Dongwook; Lee, Dong Uk; Kim, Eun Kyu; Lee, Se-Won; Jung, Seung-Min; Cho, Won-Ju
- Issue Date
- May-2013
- Publisher
- ELSEVIER SCIENCE SA
- Keywords
- Nano-particles; Vanadium silicide; Non-volatile memory device; Tunnel layer; Thermal annealing
- Citation
- JOURNAL OF ALLOYS AND COMPOUNDS, v.559, pp.1 - 4
- Indexed
- SCIE
SCOPUS
- Journal Title
- JOURNAL OF ALLOYS AND COMPOUNDS
- Volume
- 559
- Start Page
- 1
- End Page
- 4
- URI
- https://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/143733
- DOI
- 10.1016/j.jallcom.2012.12.123
- ISSN
- 0925-8388
- Abstract
- We fabricated vanadium silicide (V3Si) nano-particles embedded in silicon dioxide dielectric layer and characterized their charging effect to apply a non-volatile memory device. To create the V3Si nano-particles, the first post-annealing process in N-2 gas ambient by rapid thermal annealing method was done at 800 degrees C for 5 s. V3Si nano-particles with an average size of approximately 4-6 nm were distributed between the tunnel and control oxide layers. The channel length and width of the transistor are 5 mu m. This device maintained the memory window at about 1 V after 10(4) s, when applied program/erase voltages are +/- 9 V for 1 s. This result indicates that V3Si nano-particles have a high potential for non-volatile memory devices.
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