Cited 31 time in
Driving Force of Phase Transition in Indium Nanowires on Si(111)
| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | Kim, Hyun-Jung | - |
| dc.contributor.author | Cho, Jun-Hyung | - |
| dc.date.accessioned | 2022-07-07T06:46:52Z | - |
| dc.date.available | 2022-07-07T06:46:52Z | - |
| dc.date.issued | 2013-03 | - |
| dc.identifier.issn | 0031-9007 | - |
| dc.identifier.issn | 1079-7114 | - |
| dc.identifier.uri | https://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/143757 | - |
| dc.description.abstract | The precise driving force of the phase transition in indium nanowires on Si(111) has been controversial whether it is driven by a Peierls instability or by a simple energy lowering due to a periodic lattice distortion. The present van der Waals (vdW) corrected hybrid density functional calculation predicts that the low-temperature 8 x 2 structure whose building blocks are indium hexagons is energetically favored over the room-temperature 4 x 1 structure. We show that the correction of self-interaction error and the inclusion of vdW interactions play crucial roles in describing the covalent bonding, band-gap opening, and energetics of hexagon structures. The results manifest that the formation of hexagons occurs by a simple energy lowering due to the lattice distortion, not by a charge density wave formation arising from Fermi surface nesting. | - |
| dc.format.extent | 5 | - |
| dc.language | 영어 | - |
| dc.language.iso | ENG | - |
| dc.publisher | American Physical Society | - |
| dc.title | Driving Force of Phase Transition in Indium Nanowires on Si(111) | - |
| dc.type | Article | - |
| dc.publisher.location | 미국 | - |
| dc.identifier.doi | 10.1103/PhysRevLett.110.116801 | - |
| dc.identifier.scopusid | 2-s2.0-84875232981 | - |
| dc.identifier.wosid | 000316173100006 | - |
| dc.identifier.bibliographicCitation | Physical Review Letters, v.110, no.11, pp 1 - 5 | - |
| dc.citation.title | Physical Review Letters | - |
| dc.citation.volume | 110 | - |
| dc.citation.number | 11 | - |
| dc.citation.startPage | 1 | - |
| dc.citation.endPage | 5 | - |
| dc.type.docType | Article | - |
| dc.description.isOpenAccess | N | - |
| dc.description.journalRegisteredClass | sci | - |
| dc.description.journalRegisteredClass | scie | - |
| dc.description.journalRegisteredClass | scopus | - |
| dc.relation.journalResearchArea | Physics | - |
| dc.relation.journalWebOfScienceCategory | Physics, Multidisciplinary | - |
| dc.subject.keywordPlus | METAL-INSULATOR-TRANSITION | - |
| dc.subject.keywordPlus | QUANTUM CHAINS | - |
| dc.subject.keywordPlus | ELECTRON | - |
| dc.subject.keywordPlus | SURFACE | - |
| dc.subject.keywordPlus | INSTABILITY | - |
| dc.subject.keywordPlus | MOLECULES | - |
| dc.subject.keywordPlus | SILICON | - |
| dc.identifier.url | https://journals.aps.org/prl/abstract/10.1103/PhysRevLett.110.116801 | - |
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