Size and Surface Modification Effects on the pH Response of Si Nanowire Field-Effect Transistors
- Authors
- Baek, In-Bok; Li, Xianhong; Lee, Seongjae; Ah, Chil Seong; Yang, Jong-Heon; Park, Chan Woo; Kim, Tae-Youb; Sung, Gun Yong
- Issue Date
- Jul-2012
- Publisher
- AMER SCIENTIFIC PUBLISHERS
- Keywords
- Silicon Nanowire; Field Effect; pH Sensor
- Citation
- JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY, v.12, no.7, pp.5678 - 5682
- Indexed
- SCIE
SCOPUS
- Journal Title
- JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY
- Volume
- 12
- Number
- 7
- Start Page
- 5678
- End Page
- 5682
- URI
- https://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/144748
- DOI
- 10.1166/jnn.2012.6362
- ISSN
- 1533-4880
- Abstract
- We investigated the effects of Si nanowire (SiNW) dimensions and their surface modifications on the pH-dependent electronic transport characteristics of SiNW Electrolyte-Insulator-Semiconductor Field-Effect Transistors (EISFETs). The threshold voltages, V-th's, of all devices were extracted from the I-d-V-g characteristics with V-g applied to the reference electrode immersed in different pH solutions, and their pH-dependences were analyzed for various devices. We found that our devices produce the systematic pH-dependence of V-th with respect to the SiNW's length and show significant changes in a linear pH region and a pH sensitivity upon the Si surface modifications. Particularly in the case of the APTES-treated surface, the linear variation was observed in the wide region of pH = 2 similar to 11 with the sensitivity of 54.7 +/- 0.6 mV/pH. Also we compared our data to a theoretical result based on the Gouy-Chapmam-Stern-Graham model and found a reasonable agreement between them.
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