Electrical Features of an Amorphous Indium-Gallium-Zinc-Oxide Film Transistor Using a Double Active Matrix with Different Oxygen Contents
DC Field | Value | Language |
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dc.contributor.author | Koo, Ja Hyun | - |
dc.contributor.author | Kang, Tae Sung | - |
dc.contributor.author | Hong, Jin Pyo | - |
dc.date.accessioned | 2022-07-07T13:58:13Z | - |
dc.date.available | 2022-07-07T13:58:13Z | - |
dc.date.created | 2021-05-12 | - |
dc.date.issued | 2012-05 | - |
dc.identifier.issn | 0374-4884 | - |
dc.identifier.uri | https://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/144771 | - |
dc.description.abstract | The electrical characteristics of amorphous indium-gallium-zinc-oxide (a-IGZO) thin film transistors (TFTs) are systematically studied using a double a-IGZO active layer that is composed of a-IGZO(x) (oxygen-ion-poor region) and a-IGZO(y) (oxygen-ion-rich-region). An active layer is designed to have a serially-stacked bi-layer matrix with different oxygen contents, providing the formation of different electron conduction channels. Two different oxygen contents in the active layer are obtained by varying the O-2 partial pressure during sputtering. The a-IGZO TFT based on a double active layer exhibits a high mobility of 9.1 cm(2)/Vsec, a threshold voltage (V-T) of 16.5 V, and Delta V-T shifts of less than 1.5 V under gate voltage stress. A possible electrical sketch for the double active layer channel is also discussed. | - |
dc.language | 영어 | - |
dc.language.iso | en | - |
dc.publisher | KOREAN PHYSICAL SOC | - |
dc.title | Electrical Features of an Amorphous Indium-Gallium-Zinc-Oxide Film Transistor Using a Double Active Matrix with Different Oxygen Contents | - |
dc.type | Article | - |
dc.contributor.affiliatedAuthor | Hong, Jin Pyo | - |
dc.identifier.doi | 10.3938/jkps.60.1386 | - |
dc.identifier.scopusid | 2-s2.0-84863631212 | - |
dc.identifier.wosid | 000304100300014 | - |
dc.identifier.bibliographicCitation | JOURNAL OF THE KOREAN PHYSICAL SOCIETY, v.60, no.9, pp.1386 - 1389 | - |
dc.relation.isPartOf | JOURNAL OF THE KOREAN PHYSICAL SOCIETY | - |
dc.citation.title | JOURNAL OF THE KOREAN PHYSICAL SOCIETY | - |
dc.citation.volume | 60 | - |
dc.citation.number | 9 | - |
dc.citation.startPage | 1386 | - |
dc.citation.endPage | 1389 | - |
dc.type.rims | ART | - |
dc.type.docType | Article | - |
dc.identifier.kciid | ART001661813 | - |
dc.description.journalClass | 1 | - |
dc.description.isOpenAccess | N | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.description.journalRegisteredClass | kci | - |
dc.relation.journalResearchArea | Physics | - |
dc.relation.journalWebOfScienceCategory | Physics, Multidisciplinary | - |
dc.subject.keywordPlus | HIGH-MOBILITY | - |
dc.subject.keywordPlus | TRANSPARENT | - |
dc.subject.keywordAuthor | IGZO TFT | - |
dc.subject.keywordAuthor | Double active layer | - |
dc.subject.keywordAuthor | Oxygen vacancy | - |
dc.identifier.url | https://link.springer.com/article/10.3938/jkps.60.1386 | - |
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