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Growth of ZnTe:O Thin Films by Oxygen-Plasma-Assisted Pulsed Laser Deposition
- Authors
- Pak, Sang Woo; Suh, Jooyoung; Lee, Dong Uk; Kim, Eun Kyu
- Issue Date
- Jan-2012
- Publisher
- IOP Publishing Ltd
- Citation
- Japanese Journal of Applied Physics, v.51, no.1, pp 1 - 4
- Pages
- 4
- Indexed
- SCI
SCIE
SCOPUS
- Journal Title
- Japanese Journal of Applied Physics
- Volume
- 51
- Number
- 1
- Start Page
- 1
- End Page
- 4
- ISSN
- 0021-4922
1347-4065
- Abstract
- We studied oxygen incorporation into ZnTe thin films with oxygen ambient and oxygen plasma during pulsed laser deposition (PLO). The ZnTe layers deposited by oxygen-plasma-assisted PLD under oxygen partial pressures showed the enhancement of visible absorption due to TeOx formation by oxygen incorporation, which was confirmed by X-ray photoelectron spectroscopy measurement. The ZnTe:O thin films grown under oxygen ambient and plasma produced an energy band structure at about 0.5-0.8 eV below the ZnTe band edge, indicating strong radiative properties. The ZnTe:O samples showed the formation of intermediate bands and p-type semiconducting characteristics, which will be useful for intermediate/defect band solar cells.
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