Solution-processable tin-doped indium oxide with a versatile patternability for transparent oxide thin film transistors
- Authors
- Song, Keunkyu; Jung, Yangho; Kim, Youngwoo; Kim, Areum; Hwang, Jae Kwon; Sung, Myung Mo; Moon, Jooho
- Issue Date
- Oct-2011
- Publisher
- ROYAL SOC CHEMISTRY
- Citation
- JOURNAL OF MATERIALS CHEMISTRY, v.21, no.38, pp.14646 - 14654
- Indexed
- SCIE
SCOPUS
- Journal Title
- JOURNAL OF MATERIALS CHEMISTRY
- Volume
- 21
- Number
- 38
- Start Page
- 14646
- End Page
- 14654
- URI
- https://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/144826
- DOI
- 10.1039/c1jm11418b
- ISSN
- 0959-9428
- Abstract
- We developed solution-processable tin-doped indium oxide (ITO) with a versatile patternability. Controlling the Sn doping concentration and the annealing method/atmosphere enabled highly conductive transparent micro-patterned electrodes defined by conventional photolithography, inkjet printing, and transfer molding. Such a versatile liquid-phase ITO material was successfully applied to demonstrate for the first time fully transparent all-oxide thin film transistors with the solution-processed gate/source/drain electrodes. This proof-of-concept study suggests that our solution-processable transparent conducting oxide can open the possibility of realizing fully transparent devices using all-solution processing.
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